n-Type Organic Field-Effect Transistors with Very High Electron Mobility Based on Thiazole Oligomers with Trifluoromethylphenyl Groups

2005 ◽  
Vol 127 (43) ◽  
pp. 14996-14997 ◽  
Author(s):  
Shinji Ando ◽  
Ryo Murakami ◽  
Jun-ichi Nishida ◽  
Hirokazu Tada ◽  
Youji Inoue ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
Organic Field Effect Transistors ◽  
High Electron Mobility ◽  
Very High

High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors

2009 ◽  
Vol 21 (16) ◽  
pp. 1573-1576 ◽  
Author(s):  
Claudia Piliego ◽  
Dorota Jarzab ◽  
Giuseppe Gigli ◽  
Zhihua Chen ◽  
Antonio Facchetti ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Electron Mobility

An asymmetric naphthalimide derivative for n-channel organic field-effect transistors

2015 ◽  
Vol 17 (40) ◽  
pp. 26519-26524 ◽  
Author(s):  
Zongrui Wang ◽  
Jianfeng Zhao ◽  
Huanli Dong ◽  
Ge Qiu ◽  
Qichun Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
Organic Field Effect Transistors ◽  
High Electron Mobility

A novel asymmetric naphthalimide derivative (IZ0) is synthesized and high electron mobility of 0.072 cm2V−1s−1and 0.22 cm2V−1s−1are achieved for IZ0 film and single crystal-based transistors, respectively.

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

2011 ◽  
Vol 4 (6) ◽  
pp. 064201 ◽  
Author(s):  
Tomonori Nishimura ◽  
Choong Hyun Lee ◽  
Toshiyuki Tabata ◽  
Sheng Kai Wang ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility

Novel benzo[c][1,2,5]oxadiazole-naphthalenediimide based copolymer for high-performance air-stable n-type field-effect transistors exhibiting high electron mobility of 2.43 cm2 V−1 s−1

2017 ◽  
Vol 5 (11) ◽  
pp. 2892-2898 ◽  
Author(s):  
Zhiyuan Zhao ◽  
Zhihong Yin ◽  
Huajie Chen ◽  
Yunlong Guo ◽  
Qinxin Tang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Electron ◽  
High Electron Mobility

A copolymer (PNBO) containing benzo[c][1,2,5]oxadiazole and naphthalenediimide acceptors was developed for high-performance air-stable n-type field-effect transistors with a mobility of 2.43 cm2 V−1 s−1.

High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs

2019 ◽  
Vol 31 (14) ◽  
pp. 5254-5263 ◽  
Author(s):  
Hakan Usta ◽  
Dojeon Kim ◽  
Resul Ozdemir ◽  
Yunus Zorlu ◽  
Sanghyo Kim ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
High Electron Mobility
Sign in / Sign up

Export Citation Format

Share Document