One-Step Nanocasting Synthesis of Highly Ordered Single Crystalline Indium Oxide Nanowire Arrays from Mesostructured Frameworks

2003 ◽  
Vol 125 (16) ◽  
pp. 4724-4725 ◽  
Author(s):  
Haifeng Yang ◽  
Qihui Shi ◽  
Bozhi Tian ◽  
Qingyi Lu ◽  
Feng Gao ◽  
...  
ChemInform ◽  
2006 ◽  
Vol 37 (13) ◽  
Author(s):  
Qing Wan ◽  
Ming Wei ◽  
Dan Zhi ◽  
Judith L. MacManus-Driscoll ◽  
Mark G. Blamire

2006 ◽  
Vol 18 (2) ◽  
pp. 234-238 ◽  
Author(s):  
Q. Wan ◽  
M. Wei ◽  
D. Zhi ◽  
J. L. MacManus-Driscoll ◽  
M. G. Blamire

2006 ◽  
Vol 89 (3) ◽  
pp. 033115 ◽  
Author(s):  
B. Y. Geng ◽  
Q. B. Du ◽  
X. W. Liu ◽  
J. Z. Ma ◽  
X. W. Wei ◽  
...  

2012 ◽  
Vol 476-478 ◽  
pp. 1519-1522 ◽  
Author(s):  
You Dao Lin ◽  
Xin Wen ◽  
Lai Sen Wang ◽  
Guang Hui Yue ◽  
Dong Liang Peng

Abstract. Single crystalline SnS nanowire arrays have been synthesized by sulfurating the Sn nanowire arrays which were prepared with the electrochemical deposition. The obtained SnS nanowire arrays are charactered with the XRD, SEM, TEM and the UV/Visible/NIR spectrophotometer. And the results indicate that the nanowires with an average diameter of 50 nm and a length of several tens micrometers, which same with the as prepared Sn nanowires. There are two absorption peaks indicate with the direct and indirect bandgaps about the orthorhombic SnS nanowire arrays.


2013 ◽  
Vol 30 (10) ◽  
pp. 108102 ◽  
Author(s):  
You-Wen Yang ◽  
Tian-Ying Li ◽  
Wen-Bin Zhu ◽  
Dong-Ming Ma ◽  
Dong Chen

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.


2009 ◽  
Vol 52 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Mashkoor Ahmad ◽  
Jiong Zhao ◽  
Fan Zhang ◽  
CaoFeng Pan ◽  
Jing Zhu

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