Correction. Thermodynamic Constants and the Degree of Dissociation of Bromine Chloride in Carbon Tetrachloride Solution

1952 ◽  
Vol 74 (24) ◽  
pp. 6315-6315 ◽  
Author(s):  
Alexander Popov ◽  
James Mannion
Keyword(s):  
Carbon Tetrachloride ◽  
Degree Of Dissociation ◽  
Bromine Chloride ◽  
Carbon Tetrachloride Solution ◽  
Thermodynamic Constants

ChemInform Abstract: COMPARISON OF THE ADDITION OF BROMINE CHLORIDE TO 1-HEXENE AND 1-HEXYNE IN CARBON TETRACHLORIDE AND METHANOL

1978 ◽  
Vol 9 (52) ◽  
Author(s):  
V. L. HEASLEY ◽  
D. F. SHELLHAMER ◽  
J. A. ISKIKIAN ◽  
D. L. STREET ◽  
G. E. HEASLEY
Keyword(s):  
Carbon Tetrachloride ◽  
Bromine Chloride

The Photo‐Chlorination of Methyl Chloroformate in Carbon Tetrachloride Solution

1949 ◽  
Vol 17 (6) ◽  
pp. 566-573 ◽  
Author(s):  
T. L. Batke ◽  
L. M. Dorfman ◽  
D. J. LeRoy
Keyword(s):  
Carbon Tetrachloride ◽  
Carbon Tetrachloride Solution

Synthesis of Silicon Carbide Films from Partially Oxidized Polyvinylsilane by Carbon Tetrachloride Solution Casting

2002 ◽  
Vol 17 (1) ◽  
pp. 214-223 ◽  
Author(s):  
Masaki Narisawa ◽  
Takeshi Hasegawa ◽  
Kiyohito Okamura ◽  
Masayoshi Itoh ◽  
Thomas Apple ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Tetrachloride ◽  
Radical Polymerization ◽  
Air Flow ◽  
Spectroscopic Studies ◽  
Flow Time ◽  
Silica Layer ◽  
Solution Casting ◽  
Amorphous Films ◽  
Carbon Tetrachloride Solution

Polyvinylsilane (PVS), derived from vinylsilane by radical polymerization, was partially oxidized in hot carbon tetrachloride solution by flowing air. If the air flow time is adjusted, soft gel films can be formed in a Teflon dish by casting the PVS solution. After the PVS films were peeled from the substrates, they were pyrolyzed at various temperatures. Spectroscopic studies of the pyrolyzed films up to 1273 K suggested that carbosilane (Si–CH2–Si) structures are formed in the films at 473–673 K. The compositions of the amorphous films obtained at 1673 K were approximately SiC1.38O0.21 and SiC1.41O0.51, depending on the crosslinking conditions. The oxygen incorporated in the films was removed in the form of CO and SiO during further heating at 1673–1873 K. The compositions of the films were changed to approximately SiC1.25 and SiC1.26, respectively, at 2073 K. The films obtained at 1273 K did not show degradation during the oxidation at 1273–1673 K while a protective silica layer was formed on their surfaces.

Sign in / Sign up

Export Citation Format

Share Document