scholarly journals HIGH ENERGY HELIUM-ION IRRADIATION OF FORMIC ACID IN AQUEOUS SOLUTION1

1952 ◽  
Vol 74 (16) ◽  
pp. 4216-4216 ◽  
Author(s):  
Warren M. Garrison ◽  
Donald C. Morrison ◽  
Herman R. Haymond ◽  
Joseph G. Hamilton
Keyword(s):  
Formic Acid ◽  
Ion Irradiation ◽  
High Energy ◽  
Helium Ion

scholarly journals High Energy Helium Ion Irradiation of Aqueous Acetic Acid Solutions1,2

1953 ◽  
Vol 75 (10) ◽  
pp. 2459-2464 ◽  
Author(s):  
Warren M. Garrison ◽  
Herman R. Haymond ◽  
Donald C. Morrison ◽  
Boyd M. Weeks ◽  
Jeanne Gile-Melchert
Keyword(s):  
Acetic Acid ◽  
Ion Irradiation ◽  
High Energy ◽  
Aqueous Acetic Acid ◽  
Helium Ion

Surface erosion of stressed materials under high energy helium ion irradiation

Vacuum ◽  
1985 ◽  
Vol 35 (3) ◽  
pp. 149-153 ◽  
Author(s):  
A.P. Komissarov ◽  
N.A. Machlin
Keyword(s):  
Ion Irradiation ◽  
High Energy ◽  
Surface Erosion ◽  
Helium Ion

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ion Irradiation ◽  
Magnetic Nanostructures ◽  
Magnetic Storage ◽  
Exchange Field ◽  
Static Magnetization ◽  
Specific Domain ◽  
Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

scholarly journals Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
H. Amekura ◽  
M. Toulemonde ◽  
K. Narumi ◽  
R. Li ◽  
A. Chiba ◽  
...  
Keyword(s):  
Nuclear Energy ◽  
Energy Deposition ◽  
Ion Irradiation ◽  
High Energy ◽  
Electronic Energy ◽  
Synergy Effect ◽  
Ion Tracks ◽  
Track Formation ◽  
Low Energies ◽  
High Energy Ions

AbstractDamaged regions of cylindrical shapes called ion tracks, typically in nano-meters wide and tens micro-meters long, are formed along the ion trajectories in many insulators, when high energy ions in the electronic stopping regime are injected. In most cases, the ion tracks were assumed as consequences of dense electronic energy deposition from the high energy ions, except some cases where the synergy effect with the nuclear energy deposition plays an important role. In crystalline Si (c-Si), no tracks have been observed with any monomer ions up to GeV. Tracks are formed in c-Si under 40 MeV fullerene (C60) cluster ion irradiation, which provides much higher energy deposition than monomer ions. The track diameter decreases with decreasing the ion energy until they disappear at an extrapolated value of ~ 17 MeV. However, here we report the track formation of 10 nm in diameter under C60 ion irradiation of 6 MeV, i.e., much lower than the extrapolated threshold. The diameters of 10 nm were comparable to those under 40 MeV C60 irradiation. Furthermore, the tracks formed by 6 MeV C60 irradiation consisted of damaged crystalline, while those formed by 40 MeV C60 irradiation were amorphous. The track formation was observed down to 1 MeV and probably lower with decreasing the track diameters. The track lengths were much shorter than those expected from the drop of Se below the threshold. These track formations at such low energies cannot be explained by the conventional purely electronic energy deposition mechanism, indicating another origin, e.g., the synergy effect between the electronic and nuclear energy depositions, or dual transitions of transient melting and boiling.

Structural change by high-energy ion irradiation and post-annealing in EuBa2Cu3Oy

2002 ◽  
Vol 378-381 ◽  
pp. 527-530 ◽  
Author(s):  
H Sato ◽  
N Ishikawa ◽  
A Iwase ◽  
Y Chimi ◽  
T Hashimoto ◽  
...  
Keyword(s):  
Structural Change ◽  
Ion Irradiation ◽  
High Energy ◽  
Post Annealing
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