Energy dependence of the radiationless deactivation rate for the azulene system probed by the effect of external high pressure

1977 ◽  
Vol 99 (23) ◽  
pp. 7489-7495 ◽  
Author(s):  
Dean J. Mitchell ◽  
Harry G. Drickamer ◽  
Gary B. Schuster
Keyword(s):  
High Pressure ◽  
Energy Dependence ◽  
Deactivation Rate

High-pressure freezing of cells in suspension for low-voltage scanning electron microscopy (LVSEM)

1991 ◽  
Vol 49 ◽  
pp. 64-65
Author(s):  
Marek Malecki ◽  
James Pawley ◽  
Hans Ris
Keyword(s):  
Electron Microscopy ◽  
High Pressure ◽  
Low Voltage ◽  
Culture Media ◽  
Cell Structure ◽  
Freeze Substitution ◽  
Ice Crystal ◽  
High Pressure Freezing ◽  
Cell Culture Media ◽  
Voltage Scanning

The ultrastructure of cells suspended in physiological fluids or cell culture media can only be studied if the living processes are stopped while the cells remain in suspension. Attachment of living cells to carrier surfaces to facilitate further processing for electron microscopy produces a rapid reorganization of cell structure eradicating most traces of the structures present when the cells were in suspension. The structure of cells in suspension can be immobilized by either chemical fixation or, much faster, by rapid freezing (cryo-immobilization). The fixation speed is particularly important in studies of cell surface reorganization over time. High pressure freezing provides conditions where specimens up to 500μm thick can be frozen in milliseconds without ice crystal damage. This volume is sufficient for cells to remain in suspension until frozen. However, special procedures are needed to assure that the unattached cells are not lost during subsequent processing for LVSEM or HVEM using freeze-substitution or freeze drying. We recently developed such a procedure.

Prolonged Fixation Studies For Spaceflight

1973 ◽  
Vol 31 ◽  
pp. 332-333
Author(s):  
Robert Corbett ◽  
Delbert E. Philpott ◽  
Sam Black
Keyword(s):  
High Pressure ◽  
Living Systems ◽  
Prolonged Storage ◽  
Time Intervals ◽  
Early Signs ◽  
Large Numbers

Observation of subtle or early signs of change in spaceflight induced alterations on living systems require precise methods of sampling. In-flight analysis would be preferable but constraints of time, equipment, personnel and cost dictate the necessity for prolonged storage before retrieval. Because of this, various tissues have been stored in fixatives and combinations of fixatives and observed at various time intervals. High pressure and the effect of buffer alone have also been tried.Of the various tissues embedded, muscle, cartilage and liver, liver has been the most extensively studied because it contains large numbers of organelles common to all tissues (Fig. 1).

Cryosectioning plant roots prepared by high-pressure freezing

1987 ◽  
Vol 45 ◽  
pp. 662-663
Author(s):  
R.E. Crang ◽  
M. Mueller ◽  
K. Zierold
Keyword(s):  
High Pressure ◽  
Cell Walls ◽  
Plant Tissues ◽  
Ice Crystal ◽  
High Pressure Freezing ◽  
Vitreous State ◽  
Radial Depth ◽  
Irregular Topography ◽  
Considerable Depth ◽  
Conventional Freezing

Obtaining frozen-hydrated sections of plant tissues for electron microscopy and microanalysis has been considered difficult, if not impossible, due primarily to the considerable depth of effective freezing in the tissues which would be required. The greatest depth of vitreous freezing is generally considered to be only 15-20 μm in animal specimens. Plant cells are often much larger in diameter and, if several cells are required to be intact, ice crystal damage can be expected to be so severe as to prevent successful cryoultramicrotomy. The very nature of cell walls, intercellular air spaces, irregular topography, and large vacuoles often make it impractical to use immersion, metal-mirror, or jet freezing techniques for botanical material.However, it has been proposed that high-pressure freezing (HPF) may offer an alternative to the more conventional freezing techniques, inasmuch as non-cryoprotected specimens may be frozen in a vitreous, or near-vitreous state, to a radial depth of at least 0.5 mm.

High-pressure freezing and freeze substitution of plant tissue

1992 ◽  
Vol 50 (1) ◽  
pp. 748-749
Author(s):  
William P. Sharp ◽  
Robert W. Roberson
Keyword(s):  
High Pressure ◽  
Cell Structure ◽  
Leaf Tissue ◽  
Freeze Substitution ◽  
Crystal Formation ◽  
Ice Crystal ◽  
High Pressure Freezing ◽  
Cell Components ◽  
Cold Metal ◽  
Brome Grass

The aim of ultrastructural investigation is to analyze cell architecture and relate a functional role(s) to cell components. It is known that aqueous chemical fixation requires seconds to minutes to penetrate and stabilize cell structure which may result in structural artifacts. The use of ultralow temperatures to fix and prepare specimens, however, leads to a much improved preservation of the cell’s living state. A critical limitation of conventional cryofixation methods (i.e., propane-jet freezing, cold-metal slamming, plunge-freezing) is that only a 10 to 40 μm thick surface layer of cells can be frozen without distorting ice crystal formation. This problem can be allayed by freezing samples under about 2100 bar of hydrostatic pressure which suppresses the formation of ice nuclei and their rate of growth. Thus, 0.6 mm thick samples with a total volume of 1 mm3 can be frozen without ice crystal damage. The purpose of this study is to describe the cellular details and identify potential artifacts in root tissue of barley (Hordeum vulgari L.) and leaf tissue of brome grass (Bromus mollis L.) fixed and prepared by high-pressure freezing (HPF) and freeze substitution (FS) techniques.

Microstructural Study of Diamond Deformed Under High Pressure and Temperature

1985 ◽  
Vol 43 ◽  
pp. 230-231
Author(s):  
E. F. Koch
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Lattice Structure ◽  
Diamond Particle ◽  
Polycrystalline Diamond ◽  
Sintering Process ◽  
Ion Milling ◽  
Sintered Compact ◽  
Transmission Electron ◽  
High Pressure Sintering

Because of the extremely rigid lattice structure of diamond, generating new dislocations or moving existing dislocations in diamond by applying mechanical stress at ambient temperature is very difficult. Analysis of portions of diamonds deformed under bending stress at elevated temperature has shown that diamond deforms plastically under suitable conditions and that its primary slip systems are on the ﹛111﹜ planes. Plastic deformation in diamond is more commonly observed during the high temperature - high pressure sintering process used to make diamond compacts. The pressure and temperature conditions in the sintering presses are sufficiently high that many diamond grains in the sintered compact show deformed microtructures.In this report commercially available polycrystalline diamond discs for rock cutting applications were analyzed to study the deformation substructures in the diamond grains using transmission electron microscopy. An individual diamond particle can be plastically deformed in a high pressure apparatus at high temperature, but it is nearly impossible to prepare such a particle for TEM observation, since any medium in which the diamond is mounted wears away faster than the diamond during ion milling and the diamond is lost.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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