Optical resolution of metal chelates by use of adsorption on a colloidal clay

1981 ◽  
Vol 103 (15) ◽  
pp. 4640-4642 ◽  
Author(s):  
Akihiko Yamagishi ◽  
Mitsuyuki Soma
Keyword(s):  
Optical Resolution ◽  
Metal Chelates ◽  
Colloidal Clay

A stopped-flow electric dichroism study on adsorption of metal chelates by a colloidal clay

1990 ◽  
Vol 94 (15) ◽  
pp. 5896-5900 ◽  
Author(s):  
Masahiro. Taniguchi ◽  
Masami. Kaneyoshi ◽  
Yuji. Nakamura ◽  
Akihiko. Yamagishi ◽  
Toschitake. Iwamoto
Keyword(s):  
Metal Chelates ◽  
Stopped Flow ◽  
Electric Dichroism ◽  
Colloidal Clay

Synthesis of Axially Chiral 2,2’-Bisphosphobiarenes via a Nickel-Catalyzed Asymmetric Ullmann Coupling: General Access to Privileged Chiral Ligands without Optical Resolution

2020 ◽  
Author(s):  
Ziqing Zuo ◽  
Raphael Kim ◽  
Donald Watson
Keyword(s):  
Optical Resolution ◽  
Chiral Ligands ◽  
Chiral Auxiliaries ◽  
Axially Chiral ◽  
Ullmann Coupling

<div><p>We report an asymmetric Ullmann-type homocoupling of <i>ortho-</i>(iodo)arylphosphine oxides and <i>ortho</i>-(iodo)arylphosphonates that results in highly enantioenriched axially chiral bisphosphine oxides and bisphosphonates in good yields and excellent enantioselectivities. These products are readily converted to enantioenriched biaryl bisphosphines without need for chiral auxiliaries or optical resolution. This process provides a straightforward and practical route for the development of previously uninvestigated atroposelective biaryl bisphosphine ligands.</p></div>

VLSI Design for Functional Failure Analysis in the < 90 nm and Flip-Chip Era

2003 ◽  
Author(s):  
Yoav Weizman ◽  
Ezra Baruch
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Light Emission ◽  
Vlsi Design ◽  
Optical Resolution ◽  
Critical Issue ◽  
Acquisition Time ◽  
Resolution Limit ◽  
Design Rules ◽  
The Impact

Abstract In recent years, two new techniques were introduced for flip chip debug; the Laser Voltage Probing (LVP) technique and Time Resolved Light Emission Microscopy (TRLEM). Both techniques utilize the silicon’s relative transparency to wavelengths longer than the band gap. This inherent wavelength limitation, together with the shrinking dimensions of modern CMOS devices, limit the capabilities of these tools. It is known that the optical resolution limits of the LVP and TRLEM techniques are bounded by the diffraction limit which is ~1um for both tools using standard optics. This limitation was reduced with the addition of immersion lens optics. Nevertheless, even with this improvement, shrinking transistor geometry is leading to increased acquisition time, and the overlapping effect between adjacent nodes remains a critical issue. The resolution limit is an order of magnitude above the device feature densities in the &lt; 90nm era. The scaling down of transistor geometry is leading to the inevitable consequence where more than 50% of the transistors in 90nm process have widths smaller than 0.4um. The acquisition time of such nodes becomes unreasonably long. In order to examine nodes in a dense logic cuicuit, cross talk and convolution effects between neighboring signals also need to be considered. In this paper we will demonstrate the impact that these effects may have on modern design. In order to maintain the debug capability, with the currently available analytical tools for future technologies, conceptual modification of the FA process is required. This process should start on the IC design board where the VLSI designer should be familiar with FA constraints, and thus apply features that will enable enhanced FA capabilities to the circuit in hand during the electrical design or during the physical design stages. The necessity for reliable failure analysis in real-time should dictate that the designer of advanced VLSI blocks incorporates failure analysis constraints among other design rules. The purpose of this research is to supply the scientific basis for the optimal incorporation of design rules for optical probing in the &lt; 90nm gate era. Circuit designers are usually familiar with the nodes in the design which are critical for debug, and the type of measurement (logic or DC level) they require. The designer should enable the measurement of these signals by applying certain circuit and physical constraints. The implementation of these constraints may be done at the cell level, the block level or during the integration. We will discuss the solutions, which should be considered in order to mitigate tool limitations, and also to enable their use for next generation processes.

Sign in / Sign up

Export Citation Format

Share Document