Semiconductor electrodes. 32. n- and p-gallium arsenide n- and p-silicon, and n-titanium dioxide in liquid ammonia

1981 ◽  
Vol 103 (7) ◽  
pp. 1622-1627 ◽  
Author(s):  
Richard E. Malpas ◽  
Kingo Itaya ◽  
Allen J. Bard
Keyword(s):  
Gallium Arsenide ◽  
Titanium Dioxide ◽  
Liquid Ammonia ◽  
Semiconductor Electrodes

Chemically-modified electrodes in photoelectrochemical cells

1983 ◽  
Vol 61 (5) ◽  
pp. 888-893 ◽  
Author(s):  
Marye Anne Fox ◽  
James R. Hohman ◽  
Prashant V. Kamat
Keyword(s):  
Titanium Dioxide ◽  
Excited State ◽  
Electrochemical Properties ◽  
Tin Oxide ◽  
Modified Electrodes ◽  
Photoelectrochemical Cells ◽  
Time Resolved ◽  
Chemically Modified ◽  
Modified Surfaces ◽  
Semiconductor Electrodes

Tin oxide and titanium dioxide semiconductor electrodes have been covalently modified by the attachment of functionalized olefins and arenes through surface silanation or via a cyanuric chloride linkage. The excited state and electrochemical properties of the molecules so attached are significantly affected by the semiconductor. Photocurrent measurements and time-resolved laser coulostatic monitoring have been employed to elucidate the mechanism of charge injection on these modified surfaces.

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