Molecular and electronic structure of a mixed-spin diiron "wedged" metallacarborane, (Me2C2B4H4)2[FeII(low-spin)][FeII(high-spin)]L2 [L2 = (THF)2 or (MeO)2C2H4], an oxidative fusion intermediate

1982 ◽  
Vol 104 (22) ◽  
pp. 5987-5992 ◽  
Author(s):  
Russell N. Grimes ◽  
Richard B. Maynard ◽  
Ekk Sinn ◽  
Greg A. Brewer ◽  
Gary J. Long
Author(s):  
Poulami Pattanayak ◽  
Sankar Prasad Parua ◽  
Debprasad Patra ◽  
Ashoke Prasun Chattopadhyay ◽  
Surajit Chattopadhyay

2014 ◽  
Vol 136 (34) ◽  
pp. 11980-11993 ◽  
Author(s):  
Anna-Corina Schmidt ◽  
Frank W. Heinemann ◽  
Wayne W. Lukens ◽  
Karsten Meyer

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.


1967 ◽  
Vol 8 (5) ◽  
pp. 433-433 ◽  
Author(s):  
Gian Luigi Casalone ◽  
Carla Mariani ◽  
Angelo Mugnoli ◽  
Massimo Simonetta

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