Gas-phase organometallic kinetics. 2. Dissociative substitution kinetics of Fe(CO)2(C2H4)3 by transient IR absorption spectrometry

1987 ◽  
Vol 109 (4) ◽  
pp. 1051-1055 ◽  
Author(s):  
Bruce H. Weiller ◽  
Edward R. Grant
Keyword(s):  
Gas Phase ◽  
Absorption Spectrometry ◽  
Ir Absorption ◽  
Kinetics Of

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Gas-Phase Anionic Metal Clusters are Model Systems for Surface Oxidation: Kinetics of the Reactions of Mn– with O2 (M = V, Cr, Co, Ni; n = 1–15)

2021 ◽  
Vol 125 (10) ◽  
pp. 2069-2076
Author(s):  
Brendan C. Sweeny ◽  
David C. McDonald ◽  
Nicholas S. Shuman ◽  
Albert A. Viggiano ◽  
Juergen Troe ◽  
...  
Keyword(s):  
Gas Phase ◽  
Oxidation Kinetics ◽  
Metal Clusters ◽  
Surface Oxidation ◽  
Model Systems ◽  
Kinetics Of
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