Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films

1990 ◽  
Vol 112 (21) ◽  
pp. 7833-7835 ◽  
Author(s):  
Renaud M. Fix ◽  
Roy G. Gordon ◽  
David M. Hoffman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Solution Phase ◽  
Metal Nitride ◽  
Early Transition Metal ◽  
Transition Metal Nitride

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Growth of Antimony Thin Films Using Perbenzylated Organometallic Precursors

1998 ◽  
Vol 547 ◽  
Author(s):  
Michael P. Remington ◽  
Smuruthi Kamepalli ◽  
Philip Boudjouk ◽  
Bryan R. Jarabek ◽  
Dean G. Grier ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Carbon ◽  
Design Strategies ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Organometallic Precursors

AbstractThe low temperature (ca. 300°C) deposition of antimony films by low-pressure chemical vapor deposition (LPCVD) on glass substrates from tribenzylantimony, Bn3Sb, is described. The facile elimination of the benzyl ligands results in preferentially oriented antimony films with low carbon content. The pyrolysis, decomposition mechanism and precursor design strategies are discussed. In addition, the deposition of bismuth from tribenzylbismuth, Bn3Bi, is presented. The potential for alloy growth using these precursors is discussed. Resulting films were characterized by XRD, SEM, and AFM.

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