Formation of methyl radicals during the oxidative addition of iodomethane to a single-crystal copper surface

1993 ◽  
Vol 115 (7) ◽  
pp. 2849-2853 ◽  
Author(s):  
Jong Liang Lin ◽  
Brian E. Bent
Keyword(s):  
Single Crystal ◽  
Oxidative Addition ◽  
Copper Surface ◽  
Methyl Radicals ◽  
Single Crystal Copper

Molecular Dynamics Simulations of Sliding Friction of Rigid Sphere with Single Crystal Copper Surface

2013 ◽  
Vol 345 ◽  
pp. 167-171 ◽  
Author(s):  
Xiao Jing Yang ◽  
Xiao Jiang Yang
Keyword(s):  
Single Crystal ◽  
Sliding Friction ◽  
Normal Force ◽  
Three Dimensional ◽  
Copper Surface ◽  
Friction Model ◽  
Rigid Sphere ◽  
Stick Slip ◽  
Friction Process ◽  
Single Crystal Copper

Using LAMMPS to establish the three-dimensional sliding friction model of the nanoscale diamond hemisphere with the single-crystal copper surface. Simulation and solving the process of sliding friction, research the micro-contact area atomic states change in sliding friction process, and study the friction characteristics change when the rigid sphere sliding on rough surface of the single crystal copper with minute projections. The results indicate that, in the sliding friction process, the lattice of substrate atoms are damaged under the forces of the extrusion which also cause corresponding dislocation and deformation. In the direction of the hemisphere movement, generate the pileup and side stream phenomena, and produce furrows. Friction and normal force rapidly increase with the depth of contact, and then enter into a stable sliding phase. For the thermal motion of atoms, formation of dislocations and the stick-slip effect, the curves of friction and normal force present waves of sawtooth. Small defect on surface of the substrate almost have no effect on the process of sliding friction.

Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces

1992 ◽  
Vol 7 (9) ◽  
pp. 2429-2439 ◽  
Author(s):  
T.P. Ong ◽  
Fulin Xiong ◽  
R.P.H. Chang ◽  
C.W. White
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Copper Surface ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Diamond Nucleation ◽  
Copper Surfaces ◽  
Single Crystal Copper ◽  
Graphite Film

The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (∊820 °C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as 〈111〉diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈11$\overline 1$0〉graphite. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

Production of Single‐Crystal Copper Films at Low Temperatures

1960 ◽  
Vol 31 (9) ◽  
pp. 1672-1674 ◽  
Author(s):  
Arthur Yelon ◽  
R. W. Hoffman
Keyword(s):  
Single Crystal ◽  
Low Temperatures ◽  
Copper Films ◽  
Single Crystal Copper

Fast growth of centimeter-scale single-crystal copper foils with high-index planes by the edge-incision effect

2D Materials ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 035019
Author(s):  
Li Li ◽  
Teng Ma ◽  
Wei Yu ◽  
Menglong Zhu ◽  
Jing Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Fast Growth ◽  
High Index ◽  
Single Crystal Copper ◽  
Copper Foils

Size effect in the low-field Hall coefficient of single-crystal copper films

1985 ◽  
Vol 61 (3-4) ◽  
pp. 281-289 ◽  
Author(s):  
I. Sakamoto ◽  
M. Fukuhara ◽  
Y. Koide ◽  
K. Yonemitsu
Keyword(s):  
Size Effect ◽  
Single Crystal ◽  
Hall Coefficient ◽  
Copper Films ◽  
Single Crystal Copper ◽  
Low Field
Sign in / Sign up

Export Citation Format

Share Document