Argon fluoride (ArF) excimer laser photolysis of ammonia. Formation of imidogen and imidogen-d in the A3.PI. state

1984 ◽  
Vol 88 (11) ◽  
pp. 2201-2204 ◽  
Author(s):  
H. K. Haak ◽  
F. Stuhl
Keyword(s):  
Excimer Laser ◽  
Laser Photolysis ◽  
Arf Excimer Laser ◽  
Argon Fluoride ◽  
Ammonia Formation

Argon Fluoride Laser-Excited Atomic Fluorescence of Arsenic in a H2/Air Flame and in an Ar ICP

1994 ◽  
Vol 48 (10) ◽  
pp. 1213-1217 ◽  
Author(s):  
D. Hueber ◽  
B. W. Smith ◽  
S. Madden ◽  
J. D. Winefordner
Keyword(s):  
Excimer Laser ◽  
Broad Band ◽  
Resonance Excitation ◽  
Atomic Fluorescence Spectrometry ◽  
Fixed Frequency ◽  
Atomic Fluorescence ◽  
Laser Systems ◽  
Arf Excimer Laser ◽  
Argon Fluoride ◽  
Sensitive Method

Laser-excited atomic fluorescence spectrometry (LEAFS) can be an extremely sensitive method of trace analysis. However, some elements, such as As, have strong absorption lines only below 200 nm. Dye laser systems capable of resonance excitation of As are complicated and very expensive. By coincidence, a simple fixed-frequency argon fluoride (ArF) excimer laser produces a broad-band output centered at 193.0–193.2 nm overlapping the As absorption line at 193.7 nm. The use of an ArF excimer laser as a source for LEAFS detection of As in a H2/air flame and an Ar-ICP has been evaluated. Detection limits of about 20 ng/mL were obtained with both atomizers. The limiting noise was laser-induced scatter in both cases. Methods of improving the detection powers are discussed.

Direct Oxidation of Silicon Substrates Using ArF Excimer Laser Photolysis of N2O at Low Temperatures

1990 ◽  
Vol 19 (6) ◽  
pp. 863-866 ◽  
Author(s):  
Masaharu Tsuji ◽  
Minoru Sakumoto ◽  
Hiroshi Obase ◽  
Yukio Nishimura
Keyword(s):  
Excimer Laser ◽  
Low Temperatures ◽  
Laser Photolysis ◽  
Silicon Substrates ◽  
Direct Oxidation ◽  
Arf Excimer Laser

Excitation mechanism for hydroxyl(A) in the argon fluoride excimer laser photolysis of nitric acid

1986 ◽  
Vol 90 (7) ◽  
pp. 1294-1299 ◽  
Author(s):  
R. D. Kenner ◽  
F. Rohrer ◽  
T. Papenbrock ◽  
F. Stuhl
Keyword(s):  
Nitric Acid ◽  
Excimer Laser ◽  
Laser Photolysis ◽  
Excitation Mechanism ◽  
Argon Fluoride

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

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