PERFLUOROPIPERIDINE: ENTROPY, HEAT OF FORMATION, AND VAPOR PRESSURE; N-F BOND ENERGY; AND SOLID-STATE TRANSITIONS1,2

1963 ◽  
Vol 67 (6) ◽  
pp. 1306-1311 ◽  
Author(s):  
W. D. Good ◽  
S. S. Todd ◽  
J. F. Messerly ◽  
J. L. Lacina ◽  
J. P. Dawson ◽  
...  
Keyword(s):  
Solid State ◽  
Vapor Pressure ◽  
Bond Energy ◽  
Heat Of Formation

Thiacyclopentane: Heat Capacity, Heats of Fusion and Vaporization, Vapor Pressure, Entropy, Heat of Formation and Thermodynamic Functions1

1952 ◽  
Vol 74 (23) ◽  
pp. 6025-6030 ◽  
Author(s):  
W. N. Hubbard ◽  
H. L. Finke ◽  
D. W. Scott ◽  
J. P. McCullough ◽  
C. Katz ◽  
...  
Keyword(s):  
Heat Capacity ◽  
Vapor Pressure ◽  
Heat Of Formation

scholarly journals The Influence of Halogenated Hypercarbon on Crystal Packing in the Series of 1-Ph-2-X-1,2-dicarba-closo-dodecaboranes (X = F, Cl, Br, I)

Molecules ◽  
2020 ◽  
Vol 25 (5) ◽  
pp. 1200
Author(s):  
Miroslav Havránek ◽  
Maksim A. Samsonov ◽  
Josef Holub ◽  
Zdeňka Růžičková ◽  
Ladislav Drož ◽  
...  
Keyword(s):  
Solid State ◽  
Electrostatic Potential ◽  
Crystal Packing ◽  
Heat Of Formation ◽  
Solid State Structures

Although 1-Ph-2-X-closo-1,2-C2B10H10 (X = F, Cl, Br, I) derivatives had been computed to have positive values of the heat of formation, it was possible to prepare them. The corresponding solid-state structures were computationally analyzed. Electrostatic potential computations indicated the presence of highly positive σ-holes in the case of heavy halogens. Surprisingly, the halogen•••π interaction formed by the Br atom was found to be more favorable than that of I.

Thiacyclobutane: Heat Capacity, Heats of Transition, Fusion and Vaporization, Vapor Pressure, Entropy, Heat of Formation and Thermodynamic Functions1

1953 ◽  
Vol 75 (12) ◽  
pp. 2795-2800 ◽  
Author(s):  
D. W. Scott ◽  
H. L. Finke ◽  
W. N. Hubbard ◽  
J. P. McCullough ◽  
C. Katz ◽  
...  
Keyword(s):  
Heat Capacity ◽  
Vapor Pressure ◽  
Heat Of Formation

Formation of Amorphous Interlayers by Solid-State Diffusion in Refractory Metal/Silicon Systems

1990 ◽  
Vol 187 ◽  
Author(s):  
J.Y. Cheng ◽  
M.H. Wang ◽  
L.J. Chen
Keyword(s):  
Solid State ◽  
Linear Growth ◽  
Energy Difference ◽  
Heat Of Formation ◽  
Solid State Diffusion ◽  
Free Energy Difference ◽  
Atomic Size ◽  
Transmission Electron ◽  
State Diffusion ◽  
Interface Structures

AbstractFormation and growth of amorphous interlayers (a-interlayers) in nine refractroy metal and silicon systems by solid-state diffusion have been investigated by conventional and high resolution transmission electron microscopy. The amorphous interlayers were found to form in samples annealed at 350–650 °C. The growth was found to follow a linear growth law initially then slow down until a critical thicknees was reached. The interface structures were examined. The correlations among difference in atomic size between metal and Si atoms, growth rate and activation energy of the linear growth, critical and maximum a-interlayer thickness, the largest heat of formation energy for crystalline silicides, the calculated free energy difference in forming amorphous phase as well as atomic mobility in refractroy metal/silicon systems are discussed.

Synthesis of High-Temperature Silicides Via Rapid Solid-State Metathesis

1993 ◽  
Vol 322 ◽  
Author(s):  
Richard M. Jacubinas ◽  
Richard B. Kaner
Keyword(s):  
High Temperature ◽  
Solid State ◽  
Melting Point ◽  
Alkaline Earth ◽  
Elevated Temperatures ◽  
High Strength ◽  
Heat Of Formation ◽  
High Melting Point ◽  
Temperature Oxidation ◽  
Oxidation And Corrosion

AbstractMosi2 has a very favorable combination of materials properties, including a high melting point (2020°C), high strength at elevated temperatures, and resistance to high temperature oxidation and corrosion. These properties make it a good candidate for a hightemperature structural material; however, it has very poor ductility. A great deal of research has focused on improving the ductility of this alloy through various preparative routes. We have synthesized Mosi2, as well as WSi2, TaSi2, and NbSi2, using rapid solid-state metathesis reactions between a high oxidation state metal halide and an alkaline earth silicide. These reactions take advantage of the large exothermic heat of formation of the alkaline earth halide and can reach temperatures as high as the melting point of the product silicides. In addition, this approach yields crystalline products in seconds. The synthetic technique will be discussed along with characterization results.

Heat of formation and bond energy of bis(cyclopentadienyl)magnesium

1967 ◽  
Vol 6 (4) ◽  
pp. 805-807 ◽  
Author(s):  
H. S. Hull ◽  
Allen Forrest Reid ◽  
Alan G. Turnbull
Keyword(s):  
Bond Energy ◽  
Heat Of Formation
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