Photoelectron spectroscopy of selenium- and tellurium-containing negative ions: SeO2-, Se2-, and Te2-

1989 ◽  
Vol 93 (4) ◽  
pp. 1249-1254 ◽  
Author(s):  
J. T. Snodgrass ◽  
J. V. Coe ◽  
K. M. McHugh ◽  
C. B. Freidhoff ◽  
K. H. Bowen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Negative Ions

POSSIBLE "HOT" MOLECULE DESORPTION BY ELECTRON STIMULATED DECOMPOSITION OF DIHALOETHANES ON Cu(111)

1994 ◽  
Vol 01 (04) ◽  
pp. 535-538 ◽  
Author(s):  
S. TURTON ◽  
M. KADODWALA ◽  
ROBERT G. JONES
Keyword(s):  
Electron Capture ◽  
Photoelectron Spectroscopy ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Negative Ions ◽  
Low Energy ◽  
First Order ◽  
Sufficient Energy ◽  
Low Energy Electrons ◽  
Low Energy Electron

The desorption of ethene from physisorbed 1, 2-dichloroethane (DCE) and 1-bromo-2-chloroethane (BCE) on Cu(111) has been observed on irradiating the surface with electrons. The techniques used were low energy electron diffraction (LEED), Auger electron spectroscopy (AES), ultraviolet photoelectron spectroscopy (UPS), and mass spectrometric detection of the desorbed species. At 110 K physisorbed DCE and BCE underwent electron capture from low energy (<1 eV ) electrons in the secondary electron yield of the surface followed by decomposition and desorption of ethene alone. The decomposition was found to be first order in the surface coverage of the physisorbed DCE/BCE. No other molecular species desorbed from the surface, a stoichiometric amount of chemisorbed halogen was deposited and no carbon was detectable at the end of the desorption. The formation of the negative ions of these molecules by electron capture of low energy electrons in the secondary electron emission from the surface and the possible dynamics by which the negative ions undergo decomposition leaving the ethene product with sufficient energy to desorb, are discussed.

scholarly journals Laboratory Studies of Ion Chemistry in the Interstellar Medium

2013 ◽  
Vol 9 (S297) ◽  
pp. 258-264 ◽  
Author(s):  
V. M. Bierbaum
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Trap ◽  
Experimental Studies ◽  
Negative Ions ◽  
Carbon Chain ◽  
Ion Chemistry ◽  
Ion Flow ◽  
Polycyclic Aromatic ◽  
Selected Ion Flow Tube ◽  
Gas Phase Ion

AbstractStudies of gas phase ion-neutral reactions provide insight into many areas of astrochemistry, including the elusive characterization of the Diffuse Interstellar Bands (DIBs). This presentation gives an overview of our experimental studies of several classes of positive and negative ions, using the flowing afterglow-selected ion flow tube and a newly modified ion trap. Earlier studies of carbon chain anions and polycyclic aromatic hydrocarbon (PAH) cations, both of which have been suggested as carriers of the DIBs, are described. More recent work including isomeric PAHs, nitrogen-containing PAHs, negative ions of PAHs, and negative ions of 5-membered heterocyclic rings are discussed. Finally, the study of quantitative thermochemistry by coupling our results with data from Photoelectron Spectroscopy is described.

ChemInform Abstract: PHOTOELECTRON SPECTROSCOPY OF ALKOXIDE AND ENOLATE NEGATIVE IONS

1983 ◽  
Vol 14 (10) ◽  
Author(s):  
G. B. ELLISON ◽  
P. C. ENGELKING ◽  
W. C. LINEBERGER
Keyword(s):  
Photoelectron Spectroscopy ◽  
Negative Ions

scholarly journals Photoelectron Spectroscopy of Mass-Selected Copper-Water Cluster Negative Ions

1995 ◽  
Vol 15 (2-4) ◽  
pp. 195-207 ◽  
Author(s):  
Fuminori Misaizu ◽  
Keizo Tsukamato ◽  
Masaomi Sanekata ◽  
Kiyokazu Fuke
Keyword(s):  
Photoelectron Spectroscopy ◽  
Negative Ions ◽  
Photoelectron Spectra ◽  
Negative Ion ◽  
Cluster Ions ◽  
Electron Detachment ◽  
Energy Bands ◽  
Size Dependent ◽  
Spectral Shifts ◽  
Metal Atoms

Negative-ion photoelectron spectroscopy has been applied in order to obtain size dependent information about the electronic structure of clusters of metal atoms solvated with polar molecules. In the present paper we have investigated the photoelectron spectra of Cu2-(H2O)n, cluster ions with 2 = 0–4 and also those of Cu2-(H2O)n, with n = 0 and 1. In the spectra of Cu2-(H2O)n, the lowest energy bands were assigned to the electron detachment from the CuOH-(H2O)n−1, which were produced in the source together with the above cluster ions. The observed bands for Cu2-(H2O)n were all assigned to the transitions to the states originating in the ground 2S and first excited 2D states of the Cu atom. The stepwise hydration for Cu- and Cu2- was discussed from the observed spectral shifts.

Intersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ions

2019 ◽  
Vol 19 (03) ◽  
pp. 1950019
Author(s):  
A. R. Yadav ◽  
S. K. Dubey ◽  
R. L. Dubey ◽  
N. Subramanyam ◽  
I. Sulania
Keyword(s):  
Gallium Arsenide ◽  
Binding Energy ◽  
Crystallite Size ◽  
Photoelectron Spectroscopy ◽  
Nir Spectroscopy ◽  
Negative Ions ◽  
Core Level ◽  
Photoelectron Spectra ◽  
Gaas Sample ◽  
X Ray

Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimum fluence condition for formation of intersubband of SiGaAs in GaAs sample after implantation with 50[Formula: see text]keV silicon negative ions with fluences varying between [Formula: see text] and [Formula: see text] ions cm[Formula: see text]. The GaAs samples were investigated using X-ray photoelectron spectroscopy (XPS), UV-Vis.-NIR spectroscopy and X-ray diffraction (XRD) techniques. The X-ray photoelectron spectra for unimplanted sample showed peaks at binding energy of 18.74[Formula: see text]eV and 40.74[Formula: see text]eV indicating Ga3d and As3d core level, whereas the corresponding core level peaks for implanted sample were observed at binding energy of 19.25[Formula: see text]eV and 41.32[Formula: see text]eV. The shift in Ga3d and As3d core levels towards higher binding energy side in the implanted sample with respect to unimplanted sample were indicative of change in chemical state environment of Ga–As bond. The relative atomic percentage concentration of elemental composition measured using casa XPS software showed change in As/Ga ratio from 0.89 for unimplanted sample to 1.13 for sample implanted with the fluence of [Formula: see text] ion cm[Formula: see text]. The UV-Vis-NIR spectra showed absorption band between 1.365[Formula: see text]eV and 1.375[Formula: see text]eV due to the formation of intersubband of SiGaAs for fluences greater than [Formula: see text] ion cm[Formula: see text]. The GaAs crystallite size calculated using Brus formula was found to vary between 162[Formula: see text]nm and 540[Formula: see text]nm, respectively. The XRD spectra showed the presence of Bragg’s peak at 53.98∘ indicating (311) silicon reflection. The silicon crystallite size determined from full width at half maxima (FWHM) of (311) XRD peak was found to vary between 110[Formula: see text]nm and 161[Formula: see text]nm, respectively.

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