Two-step laser excitation fluorescence study of the reactions of the 1-naphthylmethyl radical produced in the 248-nm krypton fluoride laser photolysis of 1-(chloromethyl)naphthalene in hexane at room temperature

1985 ◽  
Vol 89 (24) ◽  
pp. 5147-5149 ◽  
Author(s):  
Kunihiro Tokumura ◽  
Masahiro Udagawa ◽  
Michiya Itoh
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Laser Photolysis ◽  
Fluorescence Study ◽  
Krypton Fluoride

scholarly journals Nonlinear Optical Response of a WS2 Monolayer at Room Temperature upon Multicolor Laser Excitation

ACS Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 550-556
Author(s):  
Javier Hernandez-Rueda ◽  
Marc L. Noordam ◽  
Irina Komen ◽  
L. Kuipers
Keyword(s):  
Nonlinear Optical ◽  
Room Temperature ◽  
Laser Excitation ◽  
Optical Response ◽  
Nonlinear Optical Response ◽  
Ws2 Monolayer

Photoluminescence of Ca4Ga2S7:Eu2+ in wide excitation intensity and temperature range

2021 ◽  
pp. 2150392
Author(s):  
B. D. Urmanov ◽  
M. S. Leanenia ◽  
G. P. Yablonskii ◽  
O. B. Taghiyev ◽  
K. O. Taghiyev ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Excitation Intensity ◽  
Temperature Measurements ◽  
Constant Time ◽  
Photoluminescence Properties ◽  
Temperature Range ◽  
Chalcogenide Semiconductors ◽  
Time Frames

Photoluminescence properties of [Formula: see text] chalcogenide semiconductors have been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room temperature. This study has shown that as a result of excitation, photoluminescence of [Formula: see text] is characterized by the emission in the interval of 450–575 nm with significant domination in the spectra line at 660 nm. Photoluminescence of [Formula: see text] quenches at wavelengths of 560 nm and 660 nm with constant time frames 258 ns and 326 ns, respectively. Moreover, the temperature measurements of photoluminescence were performed on the samples in the temperature range of 10–300 K.

Infrared and visible room temperature fluorescence induced by continuous laser excitation of new Nd3+:phosphate glasses

1999 ◽  
Vol 259 (1-3) ◽  
pp. 23-30 ◽  
Author(s):  
M. Bouderbala ◽  
H. Mohmoh ◽  
A. Bahtat ◽  
M. Bahtat ◽  
M. Ouchetto ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Phosphate Glasses ◽  
Continuous Laser

Intense Photoluminescence and Photoluminescence Enhancement of Silicon Nanocrystals by Ultraviolet Irradiation

2007 ◽  
Vol 31 ◽  
pp. 74-76 ◽  
Author(s):  
P.T. Huy ◽  
P.H. Duong
Keyword(s):  
Silicon Nanocrystals ◽  
Room Temperature ◽  
Laser Excitation ◽  
Uv Light ◽  
Irradiation Time ◽  
Excitation Wavelength ◽  
Nonradiative Recombination ◽  
Emission Yield ◽  
Recombination Centers ◽  
Pl Intensity

Photoluminescence (PL) from silicon nanocrystals deposited on top of silica-glass template and from silicon nanocrystals in nc_Si/SiO2 multilayer films were studied as a function of ultraviolet (UV) laser irradiation time in vacuum. Both the films exhibit intense visible PL at room temperature under laser excitation. It was found that upon prolong irradiation time using a He-Cd laser (325 nm) the PL intensity of the films was spectacularly enhanced. The process is reversible and does not happen with excitation wavelength longer than 400 nm. Upon introducing air into the measurement chamber, a rapid decrease of the PL intensity was recorded. This observation suggests that the UV light may lead to modification of nonradiative recombination centers in the films and thus improves the emission yield of silicon nanocrystals.

The Effect of Hydrogen/ Deuterium Introduction on Photoluminescence of 3C-SiC Crystals

1998 ◽  
Vol 513 ◽  
Author(s):  
B. K. Lee ◽  
A. J. Steckl ◽  
J. M. Zavada ◽  
R. G. Wilson
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Laser Excitation ◽  
Peak Wavelength ◽  
Final Annealing ◽  
Increasing Trend ◽  
Area Increase ◽  
Hydrogen Deuterium ◽  
Pl Intensity ◽  
Post Implantation

ABSTRACTThe effect of the incorporation and annealing of deuterium in 3C-SiC on its photoluninescence is reported. A 3C-SiC crystal has been implanted with 100 keV deuterium and subsequently annealed at temperatures between 1015 °C and 1220 °C for 1 to 5 minutes. SIMS depth profiles indicate hydrogen is strongly trapped by defects generated through ion bombardment, but a gradual damage repairing occurs during annealing. Photoluminescence was measured with 488 nm Ar laser excitation for sample temperatures from 89 K to 400 K. The PL peak wavelength of 540 nm at room temperature has shifted to 538 nm at 89 K. The peak PL intensity decreases with measurement temperature while its full width at half maximum (FWHM) exhibits an increasing trend. PL data were taken at five annealing stages. The post-implantation peak PL intensity and its integrated area increase initially with annealing temperature and time. After the final annealing at 1218 °C for 2 minute, PL intensity and its integrated area exhibit a decrease in level.

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