Ternary chalcogenide-based photoelectrochemical cells. 6. Is there a thermodynamic explanation for the output stability of copper indium sulfide (CuInS2) and copper indium selenide (CuInSe2) photoanodes?

1985 ◽  
Vol 89 (13) ◽  
pp. 2818-2827 ◽  
Author(s):  
David Cahen ◽  
Yehudith Mirovsky
Keyword(s):  
Indium Selenide ◽  
Photoelectrochemical Cells ◽  
Copper Indium Selenide ◽  
Indium Sulfide ◽  
Output Stability ◽  
Ternary Chalcogenide ◽  
Copper Indium

scholarly journals Quantized electronic transitions in electrodeposited copper indium selenide nanocrystalline homojunctions

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shalini Menezes ◽  
Anura P. Samantilleke ◽  
Bryon W. Larson
Keyword(s):  
Scale Up ◽  
Indium Selenide ◽  
State Density ◽  
Single Step ◽  
Copper Indium Selenide ◽  
Ambient Atmosphere ◽  
Inorganic Semiconductors ◽  
3 Dimensional ◽  
Roll To Roll ◽  
Copper Indium

AbstractPairing semiconductors with electrochemical processing offers an untapped opportunity to create novel nanostructures for practical devices. Here we report the results of one such pairing: the in-situ formation of highly-doped, interface-matched, sharp nanocrystalline homojunctions (NHJs) with single step electrodeposition of two copper-indium-selenide (CISe) compounds on flexible foil. It produces a homogenous film, comprising inherently ordered, 3-dimensional interconnected network of pn-CISe NHJs. These CISe NHJs exhibit surprising non-linear emissions, quantized transitions, large carrier mobility, low trap-state-density, long carrier lifetime and possible up-conversion. They facilitate efficient separation of minority carriers, reduce recombination and essentially function like quantum materials. This approach mitigates the material issues and complex fabrication of incumbent nanoscale heterojunctions; it also overcomes the flexibility and scale-up challenges of conventional planar pn junctions. The self-stabilized CISe NHJ film can be roll-to-roll processed in ambient atmosphere, thus providing a promising platform for a range of optoelectronic technologies. This concept exemplified by CISe compounds can be adapted to create nano-scale pn junctions with other inorganic semiconductors.

scholarly journals Highly Luminescent, Size- and Shape-Tunable Copper Indium Selenide Based Colloidal Nanocrystals

2013 ◽  
Vol 25 (18) ◽  
pp. 3753-3757 ◽  
Author(s):  
Olesya Yarema ◽  
Deniz Bozyigit ◽  
Ian Rousseau ◽  
Lea Nowack ◽  
Maksym Yarema ◽  
...  
Keyword(s):  
Indium Selenide ◽  
Copper Indium Selenide ◽  
Colloidal Nanocrystals ◽  
Size And Shape ◽  
Copper Indium

scholarly journals Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 645 ◽  
Author(s):  
Prasanna D. Patil ◽  
Sujoy Ghosh ◽  
Milinda Wasala ◽  
Sidong Lei ◽  
Robert Vajtai ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Low Power ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Selenide ◽  
Copper Indium Selenide ◽  
Two Dimensional ◽  
Copper Indium

Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.

Electro‐photovoltaics of Polymer‐stabilized Copper–Indium Selenide Quantum Dot

2020 ◽  
Vol 32 (12) ◽  
pp. 3086-3097
Author(s):  
Muziwenkosi Memela ◽  
Usisipho Feleni ◽  
Siyabonga Mdluli ◽  
Morongwa E. Ramoroka ◽  
Precious Ekwere ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Selenide ◽  
Copper Indium Selenide ◽  
Copper Indium ◽  
Polymer Stabilized

Defect level identification in copper indium selenide (CuInSe2) from photoluminescence studies

1990 ◽  
Vol 2 (3) ◽  
pp. 286-293 ◽  
Author(s):  
Geula Dagan ◽  
F. Abou-Elfotouh ◽  
D. J. Dunlavy ◽  
R. J. Matson ◽  
David Cahen
Keyword(s):  
Indium Selenide ◽  
Copper Indium Selenide ◽  
Defect Level ◽  
Copper Indium ◽  
Photoluminescence Studies ◽  
Level Identification
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