Metal-insulator transitions in metal clusters: a high-energy spectroscopy study of palladium and silver clusters

1992 ◽  
Vol 96 (22) ◽  
pp. 8679-8682 ◽  
Author(s):  
V. Vijayakrishnan ◽  
A. Chainani ◽  
D. D. Sarma ◽  
C. N. R. Rao
Author(s):  
M. A. Listvan ◽  
R. P. Andres

Knowledge of the function and structure of small metal clusters is one goal of research in catalysis. One important experimental parameter is cluster size. Ideally, one would like to produce metal clusters of regulated size in order to characterize size-dependent cluster properties.A source has been developed which is capable of producing microscopic metal clusters of controllable size (in the range 5-500 atoms) This source, the Multiple Expansion Cluster Source, with a Free Jet Deceleration Filter (MECS/FJDF) operates as follows. The bulk metal is heated in an oven to give controlled concentrations of monomer and dimer which were expanded sonically. These metal species were quenched and condensed in He and filtered to produce areosol particles of a controlled size as verified by mass spectrometer measurements. The clusters were caught on pre-mounted, clean carbon films. The grids were then transferred in air for microscopic examination. MECS/FJDF was used to produce two different sizes of silver clusters for this study: nominally Ag6 and Ag50.


1990 ◽  
Vol 206 ◽  
Author(s):  
Donald M. Cox ◽  
Barbara Kessler ◽  
Pierre Fayet ◽  
Wolfgang Eberhardt ◽  
Rex D. Sherwood ◽  
...  

ABSTRACTUsing high energy rare gas ion sputtering of metal targets, we are able to produce nanoamps of mass selected transition metal clusters. Mono-sized cluster ions are deposited at low kinetic energy upon substrates, e.g. silica or carbon, and are then characterized using UV and x-ray photoemission. In this paper we will discuss photoemission measurements of the 4f7/2 core level energies of Au (1–5,7 atom samples) clusters deposited on silica. From such studies we are beginning to understand how electronic structure, cluster stability and mobility depend on (deposited) cluster size, surface coverage, and substrate temperature.


1987 ◽  
Vol 2 (2) ◽  
pp. 211-215 ◽  
Author(s):  
R. S. Bhattacharya ◽  
A. K. Rai ◽  
P. P. Pronko

Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si3N4 was measured for 1 McV Au+ at doses of 1X1016 cm−2 and 5X1016 cm−2. Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si3N4 system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.


Sign in / Sign up

Export Citation Format

Share Document