Kinetics of the reaction of chlorine atoms with dimethylnitramine

1992 ◽  
Vol 96 (4) ◽  
pp. 1705-1708 ◽  
Author(s):  
Yannis G. Lazarou ◽  
Chrysostomos Michael ◽  
Panos Papagiannakopoulos
Keyword(s):  
Chlorine Atoms ◽  
Kinetics Of

Kinetics of the reactions of fluorine and chlorine atoms with ethylene oxide (oxirane)

2002 ◽  
Vol 34 (2) ◽  
pp. 122-125 ◽  
Author(s):  
D. Ponomarev ◽  
M. D. Hurley ◽  
T. J. Wallington
Keyword(s):  
Ethylene Oxide ◽  
Chlorine Atoms ◽  
Kinetics Of

Kinetics of elemental boron chlorination by chlorine atoms and chlorine molecules

1968 ◽  
Vol 72 (12) ◽  
pp. 4159-4162 ◽  
Author(s):  
Daniel E. Rosner ◽  
H. Donald Allendorf
Keyword(s):  
Chlorine Atoms ◽  
Elemental Boron ◽  
Kinetics Of

Kinetics of the Gas-Phase Reactions of Chlorine Atoms with Naphthalene, Acenaphthene, and Acenaphthylene

2014 ◽  
Vol 118 (20) ◽  
pp. 3535-3540 ◽  
Author(s):  
Matthieu Riva ◽  
Robert M. Healy ◽  
Pierre-Marie Flaud ◽  
Emilie Perraudin ◽  
John C. Wenger ◽  
...  
Keyword(s):  
Gas Phase ◽  
Gas Phase Reactions ◽  
Chlorine Atoms ◽  
Kinetics Of

Reaction Kinetics of Atomic chlorine on Si(100)2×1

1992 ◽  
Vol 280 ◽  
Author(s):  
Kazuhiro Karahashi ◽  
Jiro Matsuo ◽  
Kei Horiuchi
Keyword(s):  
Activation Energy ◽  
Transition State ◽  
Solid Surface ◽  
Surface Reaction ◽  
Thermal Excitation ◽  
Silicon Substrates ◽  
Chlorine Atoms ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Atomic Chlorine

ABSTRACTThe interaction of atomic chlorine with Si(100)2×1 surfaces was studied by using chlorine atom beams. The etching reaction of silicon substrates has been observed when chlorine atoms impinged on the chlorinated surface, at substrate temperatures below 600°C. The major desorption product is SiCl2. Studies of the temperature dependence of the reaction showed that the activation energy are 0.08 eV at 0.4 ML and 0.2 eV at 0.8 ML. These extremely low activation energies suggest that the surface reaction is mainly driven by the internal energy of incident atomic chlorine instead of thermal excitation from Si(100) solid surface. Therefore chlorine atoms enter the transition state without equilibrating at the surface prior to the reaction. The reaction strongly depends on the chlorine coverage on the surface. The reaction occurred above 0.3 ML. The etching probability of the surface reached a maximum at 0.4 ML, and decreased with increasing coverage.

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