Translational energy distribution from ethyne + h.nu.(193.3 nm) .fwdarw. ethynyl radical + hydrogen atom

1991 ◽  
Vol 95 (21) ◽  
pp. 8078-8081 ◽  
Author(s):  
J. Segall ◽  
Y. Wen ◽  
R. Lavi ◽  
R. Singer ◽  
Curt Wittig
Keyword(s):  
Hydrogen Atom ◽  
Energy Distribution ◽  
Translational Energy ◽  
Ethynyl Radical

Activation of the Si(100)/Cl2 Etching Reaction at High Cl2 Translational Energies

1991 ◽  
Vol 236 ◽  
Author(s):  
Francis X. Campos ◽  
Gabriela C. Weaver ◽  
Curtis J. Waltman ◽  
Stephen R. Leone
Keyword(s):  
Kinetic Energy ◽  
Film Thickness ◽  
Energy Distribution ◽  
Rate Increase ◽  
Laser Energy ◽  
Etching Rate ◽  
Laser Vaporization ◽  
Translational Energy ◽  
Break Surface ◽  
Broad Energy

AbstractExposing a Si(100) surface to a pulsed beam of neutral Cl2 with high translational energy results in etching at a rate faster than that seen with chlorine at thermal energies. The Cl2 beam used in these experiments is produced by laser vaporization of cryogenic films. It has a broad energy distribution which can be varied by changing laser energy and film thickness. Beams with mean energies as low as 0.4 eV result in etching =10 times faster than etching by thermal Cl2. When Cl2 beams are used which have considerable flux above 3 eV, the etching rate increases by a further factor of 3.6 ± 0.6. This rate increase, which occurs at energies just above the Si-Si bond energy, suggests that kinetic energy can be efficiently utilized to break surface bonds.

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