Temperature rises produced by a molecular beam striking a platinum surface. 2

1991 ◽  
Vol 95 (4) ◽  
pp. 1755-1759
Author(s):  
T. Tao ◽  
E. F. Greene
Keyword(s):  
Molecular Beam ◽  
Platinum Surface

Molecular beam study of CO oxidation on a (111) platinum surface

1974 ◽  
Vol 60 (4) ◽  
pp. 1453-1463 ◽  
Author(s):  
Robert L. Palmer ◽  
Joe N. Smith
Keyword(s):  
Co Oxidation ◽  
Molecular Beam ◽  
Platinum Surface

Molecular Beam Study of the Oxidation of Deuterium on a (111) Platinum Surface

1972 ◽  
Vol 56 (1) ◽  
pp. 13-20 ◽  
Author(s):  
Joe N. Smith ◽  
Robert L. Palmer
Keyword(s):  
Molecular Beam ◽  
Platinum Surface

Temperature rises produced by a molecular beam striking a platinum surface

1989 ◽  
Vol 93 (18) ◽  
pp. 6778-6785 ◽  
Author(s):  
E. F. Greene ◽  
T. Tao ◽  
N. Thantu
Keyword(s):  
Molecular Beam ◽  
Platinum Surface

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Ultrathin Platinum Crystal Surface Structures

1985 ◽  
Vol 43 ◽  
pp. 394-395
Author(s):  
R. L. Hines
Keyword(s):  
Crystal Surface ◽  
Surface Structures ◽  
Platinum Surface ◽  
Platinum Surfaces ◽  
Resolution Level ◽  
Experimental Facilities ◽  
Carbon Backing ◽  
Mesh Grid ◽  
Atom Layer

The importance of atom layer terraces or steps on platinum surfaces used for catalysis as discussed by Somorjai justifies an extensive investigation of the structure of platinum surfaces through electron microscopy at the atomic resolution level. Experimental and theoretical difficulties complicate the quantitative determination of platinum surface structures but qualitative observation of surface structures on platinum crystals is now possible with good experimental facilities.Ultrathin platinum crystals with nominal 111 orientation are prepared using the procedure reported by Hines without the application of a carbon backing layer. Platinum films with thicknesses of about ten atom layers are strong enough so that they can be mounted on grids to provide ultrathin platinum crystals for examination of surface structure. Crystals as thin as possible are desired to minimize the theoretical difficulties in analyzing image contrast to determine structure. With the current preparation procedures the crystals frequently cover complete openings on a 400 mesh grid.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Sign in / Sign up

Export Citation Format

Share Document