Uptake of dinitrogen pentoxide and nitric acid by aqueous sulfuric acid droplets

1991 ◽  
Vol 95 (4) ◽  
pp. 1684-1689 ◽  
Author(s):  
J. M. Van Doren ◽  
L. R. Watson ◽  
P. Davidovits ◽  
Douglas R. Worsnop ◽  
M. S. Zahniser ◽  
...  
Keyword(s):  
Sulfuric Acid ◽  
Nitric Acid ◽  
Dinitrogen Pentoxide ◽  
Aqueous Sulfuric Acid

Raman spectra of nitric acid in aqueous sulfuric acid solutions

1984 ◽  
Vol 33 (7) ◽  
pp. 1401-1405 ◽  
Author(s):  
N. B. Librovich ◽  
B. V. Rassadin ◽  
I. M. Medvetskaya ◽  
L. R. Andreeva ◽  
M. I. Vinnik
Keyword(s):  
Sulfuric Acid ◽  
Nitric Acid ◽  
Raman Spectra ◽  
Acid Solutions ◽  
Aqueous Sulfuric Acid ◽  
Sulfuric Acid Solutions

TIMETAL 35A

Alloy Digest ◽  
2001 ◽  
Vol 50 (11) ◽  
Keyword(s):  
Corrosion Resistance ◽  
Sulfuric Acid ◽  
High Temperature ◽  
Nitric Acid ◽  
Physical Properties ◽  
Chlorine Dioxide ◽  
Heat Treating ◽  
Bend Strength ◽  
Temperature Performance ◽  
Sodium And Potassium

Abstract Titanium shows outstanding resistance to seawater and marine atmospheres. It is also resistant to attack by hot metallic chloride solutions, sodium and potassium hypochlorite, and chlorine dioxide. The metal is resistant to attack by hot nitric acid at concentrations up to 80% and is not attacked by sulfuric acid. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and bend strength as well as fatigue. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: TI-122. Producer or source: Timet.

Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis

2018 ◽  
Author(s):  
Harold Jeffrey M. Consigo ◽  
Ricardo S. Calanog ◽  
Melissa O. Caseria
Keyword(s):  
Gallium Arsenide ◽  
Sulfuric Acid ◽  
Nitric Acid ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Mixed Acid ◽  
Optimum Parameters ◽  
Plastic Package ◽  
Fuming Nitric Acid ◽  
Concentrated Sulfuric Acid

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.

The dichotomy between nitration of substituted 1,4-dimethoxybenzenes and formation of corresponding 1,4-benzoquinones by using nitric and sulfuric acid

2000 ◽  
Vol 2000 (3) ◽  
pp. 106-107 ◽  
Author(s):  
C. Waterlot ◽  
B. Haskiak ◽  
D. Couturier
Keyword(s):  
Sulfuric Acid ◽  
Nitric Acid ◽  
Oxidative Demethylation

Various alkyl-substituted p-dimethoxybenzenes (ArH) react readily with nitric acid and sulfuric to form nitro-products (ArNO2). When the nitric acid is used in excess, the nitro-product react via either nitration to dinitro-compound (Ar(NO2)2) or via oxidative demethylation to nitro- p-quinone (Q). As such, the competition between the nitration, polynitration and oxidative dealkylation is effectively modulated by the added nitric acid and the alkyl-substituted p-dimethoxybenzenes.

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