Fundamental interfacial properties of alkyl-branched sulfate and ethoxy sulfate surfactants derived from Guerbet alcohols. 1. Surface and instantaneous interfacial tensions

1991 ◽  
Vol 95 (4) ◽  
pp. 1671-1676 ◽  
Author(s):  
Ramesh Varadaraj ◽  
Jan Bock ◽  
Paul Valint ◽  
Stephen Zushma ◽  
Robert Thomas
Keyword(s):  
Interfacial Properties ◽  
Interfacial Tensions ◽  
Guerbet Alcohols

Synthesis and Interfacial Properties of Dialkylbenzenesulfonates for Producting Low Interfacial Tensions

2008 ◽  
Vol 45 (1) ◽  
pp. 25-29 ◽  
Author(s):  
Y.-X. Wang ◽  
Y. Zhao ◽  
Q. Hou ◽  
J. Qi ◽  
Z.-S. Li
Keyword(s):  
Interfacial Properties ◽  
Interfacial Tensions

scholarly journals Exploring the effects of four important factors on oil–CO2 interfacial properties and miscibility in nanopores

RSC Advances ◽  
2017 ◽  
Vol 7 (85) ◽  
pp. 54164-54177 ◽  
Author(s):  
Kaiqiang Zhang ◽  
Na Jia ◽  
Songyan Li
Keyword(s):  
Interfacial Properties ◽  
Gas Oil ◽  
Interfacial Tensions ◽  
Effects Of Temperature

In this paper, effects of temperature, initial oil and injection gas compositions, and feed gas–oil ratio on oil–CO2 interfacial tensions, interfacial thicknesses, and minimum miscibility pressures (MMPs) in nanopores are specifically studied.

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

Surface and Interfacial Properties of Mono and Didodecyl Diphenyl Ether Disulfonates

2018 ◽  
Vol 55 (4) ◽  
pp. 302-311
Author(s):  
Long Bai ◽  
Xiaochen Liu ◽  
Tiliu Jiao ◽  
Yong Wang ◽  
Yueqing Huo ◽  
...  
Keyword(s):  
Diphenyl Ether ◽  
Interfacial Properties

Synthesis and Interfacial Tensions of Sodiump-Dimethyl Dodecylbenzene Sulfonates

2018 ◽  
Vol 55 (4) ◽  
pp. 317-324 ◽  
Author(s):  
Changming Zhao ◽  
Ling Zhang ◽  
Yue Wang ◽  
Tiexin Cheng ◽  
Wensheng Yang ◽  
...  
Keyword(s):  
Interfacial Tensions
Sign in / Sign up

Export Citation Format

Share Document