Electron spin resonance investigations of aluminum hydrides (AlH2, AlHD, AlD2), and aluminum hydroxides (Al(OH)2, and Al(OD)2) in neon matrixes at 4 K; comparisons with ab initio theoretical calculations

1993 ◽  
Vol 97 (7) ◽  
pp. 1304-1311 ◽  
Author(s):  
Lon B. Knight ◽  
James R. Woodward ◽  
Thomas J. Kirk ◽  
C. A. Arrington
Keyword(s):  
Electron Spin Resonance ◽  
Ab Initio ◽  
Electron Spin ◽  
Theoretical Calculations ◽  
Aluminum Hydroxides ◽  
Spin Resonance ◽  
Aluminum Hydrides

scholarly journals Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Naho Tsunetomo ◽  
Shohei Iguchi ◽  
Małgorzata Wierzbowska ◽  
Akiko Ueda ◽  
Yousang Won ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Thin Film Transistors ◽  
Degrees Of Freedom ◽  
Theoretical Calculations ◽  
Resonance Spectroscopy ◽  
Transition Metal Dichalcogenide ◽  
Spin States ◽  
Spin Resonance

AbstractTransition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemming from its crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degrees of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and atomic vacancies in devices have not been yet elucidated directly from a microscopic viewpoint. Here, we report the spin-states in thin-film transistors using operando electron spin resonance spectroscopy. We have observed clearly different electron spin resonance signals of the conduction electrons and atomic vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and the spin-susceptibility and g-factor temperature dependence. This analysis gives deep insight into the MoS2 magnetism and clearly indicates different spin-scattering mechanisms compared to graphene, which will be useful for improvements of the device characteristics and new applications.

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