Time-resolved optical second harmonic generation measurements of picosecond band flattening processes at single crystal TiO2 electrodes

1994 ◽  
Vol 98 (38) ◽  
pp. 9387-9390 ◽  
Author(s):  
Juliette M. Lantz ◽  
Robert M. Corn
Keyword(s):  
Second Harmonic Generation ◽  
Single Crystal ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Time Resolved ◽  
Optical Second Harmonic Generation

In Situ Time-Resolved Second-Harmonic Generation from Pt(111) Microfacetted Single-Crystal Platinum Microspheres

2001 ◽  
Vol 105 (33) ◽  
pp. 7874-7877 ◽  
Author(s):  
Boguslaw Pozniak ◽  
Yibo Mo ◽  
Ionel C. Stefan ◽  
Kevin Mantey ◽  
Mike Hartmann ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Single Crystal ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Time Resolved

Influence of Pentacene Interface Layer in ITO/-NPD/Alq3/Al Organic Light Emitting Diodes by Time-Resolved Electric-Field-Induced Optical Second-Harmonic Generation Measurement

2016 ◽  
Vol 16 (4) ◽  
pp. 3188-3193
Author(s):  
Yoshiaki Oda ◽  
Atsuo Sadakata ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Electric Field ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Interface Layer ◽  
Displacement Current ◽  
Operating Voltage ◽  
Significant Information ◽  
Time Resolved ◽  
Optical Second Harmonic Generation

By using I–V, EL–V, displacement current measurement (DCM) and time-resolved electric-field-induced optical second-harmonic generation (TR-EFISHG) measurement, we studied the influence of interface pentacene layer inserted between ITO and -NPD layers in ITO/-NPD/Alq3/Al OLEDs. All experiments were carried out for the OLEDs with and without a pentacene interface layer. The I–V and EL–V measurements showed the decrease of operating voltage of EL, the DCM showed the lowering of inception voltage of carrier injection by inserting a pentacene interface layer. The TR-EFISHG measurement showed the faster accumulation of holes at the interface between the -NPD and Alq3 layers, which resulted in the relaxation of electric field of -NPD layer accomplished by the increase of the conductivity and the increase of the electric field in the Alq3 layer. We conclude that TR-EFISHG measurement is helpful for understanding I–V and EL–V characteristics, and can be combined with other methods to give significant information which are impacted by the interface layer.

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