Excess Electron Surface States on Clusters

1994 ◽  
Vol 98 (37) ◽  
pp. 9365-9370 ◽  
Author(s):  
Michael Rosenblit ◽  
Joshua Jortner
Keyword(s):  
Surface States ◽  
Excess Electron

Electron binding and stability of excess-electron alkali halide clusters: Localization and surface states

1993 ◽  
Vol 47 (12) ◽  
pp. 7480-7493 ◽  
Author(s):  
Eric C. Honea ◽  
Margie L. Homer ◽  
Robert L. Whetten
Keyword(s):  
Alkali Halide ◽  
Surface States ◽  
Excess Electron ◽  
Electron Binding

scholarly journals An excess electron at polyethylene/vacuum interfaces using a reaction-field technique

2019 ◽  
Vol 21 (5) ◽  
pp. 2533-2539
Author(s):  
Yang Wang ◽  
Kai Wu ◽  
David Cubero
Keyword(s):  
Surface States ◽  
Field Method ◽  
Excess Electron ◽  
Reaction Field ◽  
Field Technique ◽  
Crystalline Polyethylene

An excess electron in amorphous and crystalline polyethylene-vacuum interfaces. A precise reaction-field method is used to compute the surface states.

Excess electron surface states on helium clusters

1994 ◽  
Vol 101 (11) ◽  
pp. 9982-9996 ◽  
Author(s):  
M. Rosenblit ◽  
Joshua Jortner
Keyword(s):  
Surface States ◽  
Excess Electron ◽  
Helium Clusters

Excess-electron surface states of helium clusters

1988 ◽  
Vol 38 (16) ◽  
pp. 11839-11842 ◽  
Author(s):  
M. V. Rama ◽  
K. B. Whaley
Keyword(s):  
Surface States ◽  
Excess Electron ◽  
Helium Clusters

Zero-loss omega-filtered REM and RHEED on the new Zeiss 912

1991 ◽  
Vol 49 ◽  
pp. 616-617
Author(s):  
J.C.H. Spence ◽  
J. Mayer
Keyword(s):  
Electron Microscopy ◽  
Materials Science ◽  
Surface States ◽  
Ccd Camera ◽  
Dark Field ◽  
Ion Pump ◽  
Magnetic Imaging ◽  
Reflection Electron Microscopy ◽  
Diffraction Patterns ◽  
Large Background

The Zeiss 912 is a new fully digital, side-entry, 120 Kv TEM/STEM instrument for materials science, fitted with an omega magnetic imaging energy filter. Pumping is by turbopump and ion pump. The magnetic imaging filter allows energy-filtered images or diffraction patterns to be recorded without scanning using efficient parallel (area) detection. The energy loss intensity distribution may also be displayed on the screen, and recorded by scanning it over the PMT supplied. If a CCD camera is fitted and suitable new software developed, “parallel ELS” recording results. For large fields of view, filtered images can be recorded much more efficiently than by Scanning Reflection Electron Microscopy, and the large background of inelastic scattering removed. We have therefore evaluated the 912 for REM and RHEED applications. Causes of streaking and resonance in RHEED patterns are being studied, and a more quantitative analysis of CBRED patterns may be possible. Dark field band-gap REM imaging of surface states may also be possible.

Thermal Laser Stimulation Technique for AlGaN/GaN HEMT Technologies Improvement

2013 ◽  
Author(s):  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Nathalie Labat ◽  
Nathalie Malbert ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface States ◽  
Leakage Currents ◽  
Laser Stimulation ◽  
Long Term Stability ◽  
Field Plate ◽  
Gan Hemt ◽  
Die Surface ◽  
Scan Speed ◽  
Stimulation Technique

Abstract To improve the long-term stability of AlGaN/GaN HEMTs, the reduction of gate and drain leakage currents and electrical anomalies at pinch-off is required. As electron transport in these devices is both coupled with traps or surface states interactions and with polarization effects, the identification and localization of the preeminent leakage path is still challenging. This paper demonstrates that thermal laser stimulation (TLS) analysis (OBIRCh, TIVA, XIVA) performed on the die surface are efficient to localize leakage paths in GaN based HEMTs. The first part details specific parameters, such as laser scan speed, scan direction, wavelength, and laser power applied for leakage gate current paths identification. It compares results obtained with Visible_NIR electroluminescence analysis with the ones obtained by the TLS techniques on GaN HEMT structures. The second part describes some failure analysis case studies of AlGaN/GaN HEMT with field plate structure which were successful, thanks to the OBIRCh technique.

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