Application of the Generalized Stability Model to Polymer Colloids Stabilized with Both Mobile and Fixed Charges

2007 ◽  
Vol 46 (16) ◽  
pp. 5357-5364 ◽  
Author(s):  
Zichen Jia ◽  
Hua Wu ◽  
Massimo Morbidelli
Keyword(s):  
Polymer Colloids ◽  
Fixed Charges ◽  
Stability Model ◽  
Generalized Stability

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

Efficient Treatment of Fixed and Induced Dipolar Interactions

2000 ◽  
Vol 653 ◽  
Author(s):  
Celeste Sagui ◽  
Thoma Darden
Keyword(s):  
Molecular Dynamics ◽  
Md Simulations ◽  
Lagrangian Formalism ◽  
Dipolar Interactions ◽  
Time Step ◽  
Efficient Treatment ◽  
Particle Mesh Ewald ◽  
Fixed Charges ◽  
Self Consistency ◽  
Induced Dipoles

AbstractFixed and induced point dipoles have been implemented in the Ewald and Particle-Mesh Ewald (PME) formalisms. During molecular dynamics (MD) the induced dipoles can be propagated along with the atomic positions either by interation to self-consistency at each time step, or by a Car-Parrinello (CP) technique using an extended Lagrangian formalism. The use of PME for electrostatics of fixed charges and induced dipoles together with a CP treatment of dipole propagation in MD simulations leads to a cost overhead of only 33% above that of MD simulations using standard PME with fixed charges, allowing the study of polarizability in largemacromolecular systems.

Solutions and Stability of Generalized Mixed Type QCA-Functional Equations in Random Normed Spaces

2013 ◽  
Vol 59 (2) ◽  
pp. 299-320
Author(s):  
M. Eshaghi Gordji ◽  
Y.J. Cho ◽  
H. Khodaei ◽  
M. Ghanifard
Keyword(s):  
Functional Equation ◽  
General Solution ◽  
Functional Equations ◽  
Mixed Type ◽  
Additive Functional ◽  
Normed Spaces ◽  
Additive Functional Equation ◽  
Probabilistic Normed Spaces ◽  
Random Normed Spaces ◽  
Generalized Stability

Abstract In this paper, we investigate the general solution and the generalized stability for the quartic, cubic and additive functional equation (briefly, QCA-functional equation) for any k∈ℤ-{0,±1} in Menger probabilistic normed spaces.

scholarly journals Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 751
Author(s):  
Yu-Lin Song ◽  
Manoj Kumar Reddy ◽  
Luh-Maan Chang ◽  
Gene Sheu
Keyword(s):  
Conduction Band ◽  
Computer Aided Design ◽  
Measurement Data ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Device Structure ◽  
Gan Hemt ◽  
Fixed Charges ◽  
Vertical Electric Field ◽  
Aided Design

This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges −5 × 1012 cm−2, donor-like traps −3 × 1013 cm−2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data.

Coalescence mechanisms of polymer colloids

1992 ◽  
Vol 152 (1) ◽  
pp. 1-11 ◽  
Author(s):  
F Dobler ◽  
T Pith ◽  
M Lambla ◽  
Y Holl
Keyword(s):  
Polymer Colloids
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