Electronic Structure of the A8Tr11(A = K, Rb, Cs; Tr = Ga, In, Tl) Zintl Phases: Possible Chemical Reasons Behind Their Activated versus Non Activated Conductivity

2009 ◽  
Vol 48 (20) ◽  
pp. 9792-9799 ◽  
Author(s):  
Manuel Cobián ◽  
Pere Alemany ◽  
Alberto García ◽  
Enric Canadell
Keyword(s):  
Electronic Structure ◽  
Zintl Phases

Exploring the frontier between polar intermetallics and Zintl phases for the examples of the prolific ALnTnTe3-type alkali metal (A) lanthanide (Ln) late transition metal (Tn) tellurides

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Katharina Eickmeier ◽  
Simon Steinberg
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Crystal Structures ◽  
Electronic Structures ◽  
Basic Research ◽  
Structural Features ◽  
Transition Elements ◽  
Zintl Phases ◽  
Group I ◽  
Polar Intermetallics

Abstract Understanding electronic structures is important in order to interpret and to design the chemical and physical properties of solid-state materials. Among those materials, tellurides have attracted an enormous interest, because several representatives of this family are at the cutting edge of basic research and technologies. Despite this relevance of tellurides with regard to the design of materials, the interpretations of their electronic structures have remained challenging to date. For instance, most recent research on tellurides, which primarily comprise post-transition elements, revealed a remarkable electronic state, while the distribution of the valence electrons in tellurides comprising group-I/II elements could be related to the structural features by applying the Zintl-Klemm-Busmann concept. In the cases of tellurides containing transition metals the applications of the aforementioned idea should be handled with care, as such tellurides typically show characteristics of polar intermetallics rather than Zintl phases. And yet, how may the electronic structure look like for a telluride that consists of a transition metal behaving like a p metal? To answer this question, we examined the electronic structure for the quaternary RbTbCdTe3 and provide a brief report on the crystal structures of the isostructural compounds RbErZnTe3 and RbTbCdTe3, whose crystal structures have been determined by means of X-ray diffraction experiments for the very first time.

High-pressure crystal chemistry of binary intermetallic compounds

2006 ◽  
Vol 221 (5-7) ◽  
Author(s):  
Roman Demchyna ◽  
Stefano Leoni ◽  
Helge Rosner ◽  
Ulrich Schwarz
Keyword(s):  
High Pressure ◽  
Electronic Structure ◽  
Phase Transitions ◽  
Intermetallic Compound ◽  
Intermetallic Compounds ◽  
High Pressures ◽  
Structural Transformations ◽  
Pressure Effects ◽  
Zintl Phases ◽  
Bonding Properties

AbstractEffects of high pressure on intermetallic compounds are reviewed with regards to structural stability and phase transitions. Changes of bonding properties and electronic structure are examplified by means of the elemental metals caesium and titanium, the latter forming an internal intermetallic compound at high pressures. After a short systematic overview regarding pressure effects, structural transformations in selected classes of intermetallic compounds like Zintl phases and AlB

Synthesis, crystal and electronic structure, physical properties and121Sb and151Eu Mössbauer spectroscopy of the Eu14AlPn11series (Pn = As, Sb)

2019 ◽  
Vol 6 (1) ◽  
pp. 137-147 ◽  
Author(s):  
Mathis Radzieowski ◽  
Theresa Block ◽  
Steffen Klenner ◽  
Yuemei Zhang ◽  
Boniface P. T. Fokwa ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electronic Structure ◽  
Mössbauer Spectroscopy ◽  
Physical Properties ◽  
Mossbauer Spectroscopy ◽  
Theoretical Calculations ◽  
Zintl Phases ◽  
Structure And Property ◽  
Mößbauer Spectroscopy ◽  
Crystal And Electronic Structure

Structure and property investigations of the Zintl phases Eu14AlAs11and Eu14AlSb11: magnetism, electrical resistivity, Mössbauer spectroscopy and theoretical calculations.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

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