Preparation of Indium Antimonide and Gallium Arsenide Films

1962 ◽  
Vol 1 (4) ◽  
pp. 951-953 ◽  
Author(s):  
Ben C. Harrison ◽  
Edwin H. Tompkins
Keyword(s):  
Gallium Arsenide ◽  
Indium Antimonide

Relative Analysis of GaAs, InSb, InP Using QWFET

2014 ◽  
Vol 984-985 ◽  
pp. 1080-1084 ◽  
Author(s):  
T.D. Subash ◽  
T. Gnanasekaran ◽  
J. Jagannathan ◽  
C. Divya
Keyword(s):  
Gallium Arsenide ◽  
Band Structure ◽  
Indium Phosphide ◽  
Low Power ◽  
Indium Antimonide ◽  
Electron Mobility ◽  
High Speed ◽  
Simulation Tool ◽  
Saturation Velocity ◽  
Relative Analysis

Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with some other major components like Indium Phosphide (InP) and Gallium Arsenide (GaAs) which are also from same III-V group. The analysis was made using the simulation tool TCAD and using the properties and band structure of those materials we compare InSb with InP and GaAs. The results we proposed shows that InSb is best for ultra high speed and very low power applications.

Some ultrasonic attenuation measurements on indium antimonide and gallium arsenide

1970 ◽  
Vol 315 (1522) ◽  
pp. 369-379 ◽  
Keyword(s):  
Gallium Arsenide ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Indium Antimonide ◽  
Ultrasonic Attenuation ◽  
The Individual

Measurements have been made of the temperature dependence at 1 GHz of the ultrasonic attenuation of various modes in single crystals of n -type indium antimonide and gallium arsenide. The observed attenuation has been compared with predictions based on the work of Simons and Maris which takes into account the finite lifetime of the thermal phonons with which the ultrasonic phonons interact. The agreement obtained is in general acceptable, considering that in the treatment given, there are no adjustable parameters. Further experiments are suggested to identify the individual processes which are responsible for the attenuation. It is suggested that information concerning the lifetime of specific thermal modes may soon be available from such attenuation measurements.

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

2015 ◽  
Vol 14 (03) ◽  
pp. 1450025 ◽  
Author(s):  
Yogesh Goswami ◽  
Pranav Asthana ◽  
Shibir Basak ◽  
Bahniman Ghosh
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Threshold Voltage ◽  
Indium Antimonide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Short Channel ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

scholarly journals INFLUENCE OF THE SEMICONDUCTOR CONDUCTIVITY ON THE VALUE OF THE SCHOTTKY BARRIER

2021 ◽  
Author(s):  
Р.М. Магомадов ◽  
Р.Р. Юшаев
Keyword(s):  
Gallium Arsenide ◽  
Cadmium Sulfide ◽  
Band Gap ◽  
Schottky Barrier ◽  
Indium Arsenide ◽  
Indium Antimonide ◽  
Semiconductor Contact ◽  
Semiconductor Conductivity

В данной работе исследовано влияние проводимости полупроводника на Барьер Шотки в контакте металл полупроводник. В качестве объектов исследования выбраны контакты с алюминием следующих полупроводников: арсенида индия(InAs), арсенида галлия (GaAs)антимонида индия(InSb) и сульфида кадмия(CdS). Выбор этих кристаллов связан с тем, что ширина запрещенной зоны этих полупроводников возрастает от Еg = 0,18 эВ у арсенида индия до Еg = 2,53 эВ у сульфида кадмия, что соответствует поставленной задаче в данной работе. In this paper, the influence of the conductivity of a semiconductor on the Schottky Barrier in the metal-semiconductor contact is investigated. Contacts with aluminum of the following semiconductors were selected as objects of research: indium arsenide(InAs), gallium arsenide (GaAs), indium antimonide(InSb), and cadmium sulfide(CDs). The choice of these crystals is due to the fact that the band gap of these semiconductors increases from U = 0.18 eV for indium arsenide to U =eV for cadmium sulfide, which corresponds to the task in this paper.

Matrices of indium antimonide nanowires and their applications

2018 ◽  
Vol 1 (1) ◽  
pp. 78-94
Author(s):  
I. A. Obukhov ◽  
◽  
G. G. Gorokh ◽  
A. A. Lozovenko ◽  
E. A. Smirnova ◽  
...  
Keyword(s):  
Indium Antimonide
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