Structural Studies Coupling X-ray Diffraction and High-Energy X-ray Scattering in the UO22+–HBraqSystem

2011 ◽  
Vol 50 (21) ◽  
pp. 10748-10754 ◽  
Author(s):  
Richard E. Wilson ◽  
S. Skanthakumar ◽  
C. L. Cahill ◽  
L. Soderholm
ChemInform ◽  
2011 ◽  
Vol 43 (4) ◽  
pp. no-no
Author(s):  
Richard E. Wilson ◽  
S. Skanthakumar ◽  
C. L. Cahill ◽  
L. Soderholm

2006 ◽  
Vol 15 (4-8) ◽  
pp. 1036-1040 ◽  
Author(s):  
J. Koloczek ◽  
A. Brodka ◽  
A. Burian ◽  
J.C. Dore ◽  
V. Honkimaki ◽  
...  

2015 ◽  
Vol 22 (3) ◽  
pp. 688-700 ◽  
Author(s):  
V. Cantelli ◽  
O. Geaymond ◽  
O. Ulrich ◽  
T. Zhou ◽  
N. Blanc ◽  
...  

This paper presents the upgraded `In situ growth of Nanoscructures on Surfaces' (INS) endstation of the InterFace beamline IF-BM32 at the European Synchrotron Radiation Facility (ESRF). This instrument, originally designed to investigate the structure of clean surfaces/interfaces/thin-films by surface X-ray diffraction, has been further developed to investigate the formation and evolution of nanostructures by combining small- and wide-angle X-ray scattering methodologies,i.e.grazing-incidence small-angle X-ray scattering (GISAXS) and grazing-incidence X-ray diffraction (GIXD). It consists of a UHV chamber mounted on az-axis type goniometer, equipped with residual gas analysis, reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) to complete the X-ray scattering investigations. The chamber has been developed so as up to eight sources of molecular beam epitaxy (MBE) can be simultaneously mounted to elaborate the nanostructures. A chemical vapor deposition (CVD) set-up has been added to expand the range of growing possibilities, in particular to investigatein situthe growth of semiconductor nanowires. This setup is presented in some detail, as well as the firstin situX-ray scattering measurements during the growth of silicon nanowires.


2020 ◽  
Vol 91 (12) ◽  
pp. 123501
Author(s):  
M. Šmíd ◽  
C. Baehtz ◽  
A. Pelka ◽  
A. Laso García ◽  
S. Göde ◽  
...  

Polymer ◽  
2001 ◽  
Vol 42 (21) ◽  
pp. 8965-8973 ◽  
Author(s):  
Zhi-Gang Wang ◽  
Xuehui Wang ◽  
Benjamin S. Hsiao ◽  
Saša Andjelić ◽  
Dennis Jamiolkowski ◽  
...  

2021 ◽  
Vol 54 (3) ◽  
Author(s):  
Peter Nadazdy ◽  
Jakub Hagara ◽  
Petr Mikulik ◽  
Zdenko Zaprazny ◽  
Dusan Korytar ◽  
...  

A four-bounce monochromator assembly composed of Ge(111) and Ge(220) monolithic channel-cut monochromators with V-shaped channels in a quasi-dispersive configuration is presented. The assembly provides an optimal design in terms of the highest transmittance and photon flux density per detector pixel while maintaining high beam collimation. A monochromator assembly optimized for the highest recorded intensity per detector pixel of a linear detector placed 2.5 m behind the assembly was realized and tested by high-resolution X-ray diffraction and small-angle X-ray scattering measurements using a microfocus X-ray source. Conventional symmetric and asymmetric Ge(220) Bartels monochromators were similarly tested and the results were compared. The new assembly provides a transmittance that is an order of magnitude higher and 2.5 times higher than those provided by the symmetric and asymmetric Bartels monochromators, respectively, while the output beam divergence is twice that of the asymmetric Bartels monochromator. These results demonstrate the advantage of the proposed monochromator assembly in cases where the resolution can be partially sacrificed in favour of higher transmittance while still maintaining high beam collimation. Weakly scattering samples such as nanostructures are an example. A general advantage of the new monochromator is a significant reduction in the exposure time required to collect usable experimental data. A comparison of the theoretical and experimental results also reveals the current limitations of the technology of polishing hard-to-reach surfaces in X-ray crystal optics.


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