Iron Thiobiurets: Single-Source Precursors for Iron Sulfide Thin Films

2010 ◽  
Vol 49 (18) ◽  
pp. 8495-8503 ◽  
Author(s):  
Karthik Ramasamy ◽  
Mohammad A. Malik ◽  
Madeline Helliwell ◽  
Floriana Tuna ◽  
Paul O’Brien
Keyword(s):  
Thin Films ◽  
Iron Sulfide ◽  
Single Source ◽  
Single Source Precursors

scholarly journals Synthesis of nanostructured powders and thin films of iron sulfide from molecular precursors

RSC Advances ◽  
2018 ◽  
Vol 8 (51) ◽  
pp. 29096-29103 ◽  
Author(s):  
Laila Almanqur ◽  
Inigo Vitorica-yrezabal ◽  
George Whitehead ◽  
David J. Lewis ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Spin Coating ◽  
Iron Sulfide ◽  
Single Source ◽  
Single Source Precursors ◽  
Molecular Precursors ◽  
Nanostructured Powders

Iron(iii) xanthate single-source precursors were used to deposit iron sulfide thin films and nanostructures by spin coating and solid state deposition.

Deposition of iron sulfide thin films by AACVD from single source precursors

2012 ◽  
Vol 346 (1) ◽  
pp. 106-112 ◽  
Author(s):  
Masood Akhtar ◽  
Ahmed Lutfi Abdelhady ◽  
M. Azad Malik ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Iron Sulfide ◽  
Single Source ◽  
Single Source Precursors

scholarly journals Heterocyclic dithiocarbamato-iron(iii) complexes: single-source precursors for aerosol-assisted chemical vapour deposition (AACVD) of iron sulfide thin films

2016 ◽  
Vol 45 (6) ◽  
pp. 2647-2655 ◽  
Author(s):  
Sixberth Mlowe ◽  
David J. Lewis ◽  
Mohammad Azad Malik ◽  
James Raftery ◽  
Egid B. Mubofu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Iron Sulfide ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

A series of iron(iii) heterocyclic dithiocarbamate complexes were synthesized and characterized and were used as single source precursors to deposit iron sulfide thin films.

Iron Sulfide (FeS2) Thin Films From Single-Source Precursors by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

1999 ◽  
Vol 606 ◽  
Author(s):  
Paul O'Brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Iron Sulfide ◽  
Chemical Vapor ◽  
Analytical Techniques ◽  
Single Source ◽  
Sem Images ◽  
Organic Precursor ◽  
Single Source Precursors

AbstractDialkyl (or mixed alkyl)-dithiocarbamato iron(III) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by the reaction of FeCl3with dialkyldithiocarbamate sodium salts and characterized by a number of analytical techniques. Good quality thin films of FeS2 have been prepared from the single-source metal organic precursor, [Fe(S2CNMeiPr)3], by AACVD. XRD patterns of the films indicated crystalline iron sulfide (FeS2) grown at between 375 – 450 °C. SEM images show the films to have reasonable morphology and to be crystalline.

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Semiconductor Thin Films

Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Single Source ◽  
Group 13 ◽  
Single Source Precursors ◽  
Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

scholarly journals Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films

2018 ◽  
Vol 47 (31) ◽  
pp. 10536-10543 ◽  
Author(s):  
Kelly Rees ◽  
Emanuela Lorusso ◽  
Samuel D. Cosham ◽  
Alexander N. Kulak ◽  
Geoffrey Hyett
Keyword(s):  
Thin Films ◽  
Phase Space ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.

scholarly journals Synthesis and properties of MoCl4complexes with thio- and seleno-ethers and their use for chemical vapour deposition of MoSe2and MoS2films

2018 ◽  
Vol 47 (7) ◽  
pp. 2406-2414 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid ◽  
Joshua Whittam
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Chloride Complexes ◽  
Single Source Precursors

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.

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