Structural Characterization and Electronic Properties Determination by High-Field and High-Frequency EPR of a Series of Five-Coordinated Mn(II) Complexes

2004 ◽  
Vol 43 (20) ◽  
pp. 6455-6463 ◽  
Author(s):  
Claire Mantel ◽  
Carole Baffert ◽  
Isabel Romero ◽  
Alain Deronzier ◽  
Jacques Pécaut ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Structural Characterization ◽  
High Frequency ◽  
High Field

Solvent-free dynamic nuclear polarization enhancements in organically modified mesoporous silica

2021 ◽  
Author(s):  
Marcos de Oliveira Jr. ◽  
Kevin Herr ◽  
Martin Brodrecht ◽  
Nadia Berenice Haro-Mares ◽  
Till Wissel ◽  
...  
Keyword(s):  
Mesoporous Silica ◽  
Porous Materials ◽  
Structural Characterization ◽  
Dynamic Nuclear Polarization ◽  
High Field ◽  
Nuclear Polarization ◽  
Organically Modified ◽  
Field Dynamic ◽  
Free Dynamic

High-field Dynamic Nuclear Polarization is a powerful tool for the structural characterization of species on the surface of porous materials or nanoparticles. For these studies the main source of polarization...

The high field, high frequency permeability of narrow, thin-film magnetic stripes

1991 ◽  
Vol 27 (6) ◽  
pp. 4876-4878 ◽  
Author(s):  
B.C. Webb ◽  
M.E. Re ◽  
C.V. Jahnes ◽  
M.A. Russak
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
High Field

High-field/high-frequency EPR spectrometer operating in pulsed and continuous-wave mode at 180 GHz

2001 ◽  
Vol 21 (3-4) ◽  
pp. 257-274 ◽  
Author(s):  
M. Rohrer ◽  
O. Brügmann ◽  
B. Kinzer ◽  
T. F. Prisner
Keyword(s):  
High Frequency ◽  
High Field ◽  
Continuous Wave ◽  
Wave Mode ◽  
Continuous Wave Mode

Shallow P+-N Junction Fabrication by Plasma Immersion Ion Implantation

1991 ◽  
Vol 223 ◽  
Author(s):  
C. A. Pico ◽  
X. Y. Qian ◽  
E. Jones ◽  
M. A. Lieberman ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Ideality Factor ◽  
High Frequency ◽  
Cyclotron Resonance ◽  
High Field ◽  
Electron Cyclotron Resonance ◽  
Forward Bias ◽  
Electron Cyclotron ◽  
Significant Damage ◽  
Plasma Immersion Ion Implantation

ABSTRACTPlasma immersion ion implantation (PIII) has been applied to fabricate shallow p-n junction diodes and MOS test structures. BF3 ions created by an electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of −2 kv. The implant doses ranged from 4 × 1014/cm2 to 4 × 1015/cm2. In some cases, the top layers of the Si(100) substrates were preamorphized by a 3 × 1015/cm2 to 1016/cm2 implant of SiF4 by PIII at −7.2 kV prior to the BF3 implant. The ideality factor exhibited in both non- and preamorphized samples during forward bias is 1.02 to 1.05. Reverse leakages were measured at 30 nA/cm2 at −5V. High frequency capacitance and high field breakdown measurements of the oxide test structures showed no significant damage to the oxide.

Determination of the g-matrix orientation in flavin radicals by high-field/high-frequency electron-nuclear double resonance

2005 ◽  
Vol 43 (S1) ◽  
pp. S96-S102 ◽  
Author(s):  
Christopher W. M. Kay ◽  
Erik Schleicher ◽  
Kenichi Hitomi ◽  
Takeshi Todo ◽  
Robert Bittl ◽  
...  
Keyword(s):  
High Frequency ◽  
High Field ◽  
Double Resonance ◽  
Electron Nuclear Double Resonance ◽  
Matrix Orientation
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