Electronic Structure and Reactivity of High-Spin Iron−Alkyl- and −Pterinperoxo Complexes

2003 ◽  
Vol 42 (2) ◽  
pp. 469-481 ◽  
Author(s):  
Nicolai Lehnert ◽  
Kiyoshi Fujisawa ◽  
Edward I. Solomon
Keyword(s):  
Electronic Structure ◽  
High Spin ◽  
High Spin Iron

Synthesis and Electronic Structure of Neutral Square-Planar High-Spin Iron(II) Complexes Supported by a Dianionic Pincer Ligand

2019 ◽  
Vol 58 (2) ◽  
pp. 1252-1266 ◽  
Author(s):  
Brett M. Hakey ◽  
Jonathan M. Darmon ◽  
Yu Zhang ◽  
Jeffrey L. Petersen ◽  
Carsten Milsmann
Keyword(s):  
Electronic Structure ◽  
High Spin ◽  
Pincer Ligand ◽  
Square Planar ◽  
High Spin Iron

Magnetic properties and electronic structure of high spin iron(III) porphyrins

1983 ◽  
Vol 78 (3) ◽  
pp. 1453-1458 ◽  
Author(s):  
Roshun Birdy ◽  
D. V. Behere ◽  
S. Mitra
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
High Spin ◽  
High Spin Iron

Cover Picture: Electronic Structure of High-Spin Iron(IV) Complexes (Eur. J. Inorg. Chem. 23/2004)

2004 ◽  
Vol 2004 (23) ◽  
pp. 4537-4537
Author(s):  
Abhik Ghosh ◽  
Espen Tangen ◽  
Hege Ryeng ◽  
Peter�R. Taylor
Keyword(s):  
Electronic Structure ◽  
High Spin ◽  
High Spin Iron

Electronic Structure of High-Spin Iron(IV) Complexes

2004 ◽  
Vol 2004 (23) ◽  
pp. 4555-4560 ◽  
Author(s):  
Abhik Ghosh ◽  
Espen Tangen ◽  
Hege Ryeng ◽  
Peter�R. Taylor
Keyword(s):  
Electronic Structure ◽  
High Spin ◽  
High Spin Iron

Theory Of 3d Transition Metal Defects In 3C SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Electronic Properties ◽  
Crystal Field ◽  
High Spin ◽  
Crystal Field Splitting ◽  
Large Crystal ◽  
Field Splitting ◽  
Vacancy Model ◽  
The Difference

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.

Synthetic, Structural, and Spectroscopic Characterization of a Novel Family of High-Spin Iron(II) [(β-Diketiminate)(phosphanylphosphido)] Complexes

2017 ◽  
Vol 56 (18) ◽  
pp. 11030-11042 ◽  
Author(s):  
Rafał Grubba ◽  
Kinga Kaniewska ◽  
Łukasz Ponikiewski ◽  
Beata Cristóvão ◽  
Wiesława Ferenc ◽  
...  
Keyword(s):  
High Spin ◽  
Spectroscopic Characterization ◽  
High Spin Iron
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