Synthesis and Characterization of Large, High-Quality Zeolite MFI Single Crystals from a Monocrystalline Silicon Slice

2002 ◽  
Vol 0 (0) ◽  
pp. 0-0
Author(s):  
F. Gao ◽  
G. Zhu ◽  
B. Li ◽  
Y. Wei ◽  
S. Qiu
1999 ◽  
Vol 14 (4) ◽  
pp. 1221-1226 ◽  
Author(s):  
D. P. Scarfe ◽  
X. Xiong ◽  
W. J. Zhu ◽  
P. H. Hor ◽  
S. C. Moss ◽  
...  

An electrochemical oxidation technique was used to obtain bulk oxidized La2CuO4+δ single crystals from the as-grown crystals. Samples were prepared by galvanostatic oxidation with currents in the range 5–10 μA and with different charging times. Some samples were annealed at 110 °C in flowing oxygen. Small high-quality crystals were obtained from electrochemically oxidized larger crystals that contained microcracks. Transmission x-ray Laue photography and rocking curve measurements for several fundamental diffraction peaks were used to confirm the crystal quality. The Tc and bulk magnetic properties of samples at different stages in the oxidation process are reported. After annealing at 110 °C, a 15 K transition was observed.


2011 ◽  
Vol 83 (10) ◽  
Author(s):  
T. H. Han ◽  
J. S. Helton ◽  
S. Chu ◽  
A. Prodi ◽  
D. K. Singh ◽  
...  

2018 ◽  
Vol 73 (11) ◽  
pp. 1716-1724 ◽  
Author(s):  
Dae Young Park ◽  
Hye Ryung Byun ◽  
A Young Lee ◽  
Ho Min Choi ◽  
Seong Chu Lim ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 29 (34) ◽  
pp. no-no ◽  
Author(s):  
G. ZHU ◽  
S. QUI ◽  
J. YU ◽  
Y. SAKAMOTO ◽  
F. XIAO ◽  
...  

1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.


CrystEngComm ◽  
2020 ◽  
Vol 22 (27) ◽  
pp. 4544-4551
Author(s):  
Zeng Luo ◽  
Jian Zhuang ◽  
Zenghui Liu ◽  
Nan Zhang ◽  
Wei Ren ◽  
...  

BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 single crystals with high quality have been successfully grown by the top-seeded solution growth method and the single ferroelastic domain structures and ferroelectric behaviors have also been reviewed.


2020 ◽  
Vol 62 (6) ◽  
pp. 1024-1032
Author(s):  
M. Atikur Rahman ◽  
M. R. Akter ◽  
M. Romana Khatun ◽  
R. Sultana ◽  
M. A. Razzaque Sarker

CrystEngComm ◽  
2019 ◽  
Vol 21 (15) ◽  
pp. 2508-2516 ◽  
Author(s):  
Conggang Li ◽  
Zeliang Gao ◽  
Xiangxin Tian ◽  
Junjie Zhang ◽  
Dianxing Ju ◽  
...  

The large, high-quality Bi3FeO4(MoO4)2 single crystals of size up to 28 × 20 × 12 mm3 were grown successfully by the TSSG method. The thermal, optical, magnetization, and polarized Raman properties are investigated in detail.


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