Controlled-Atmosphere Induction Melting Furnace for Laboratory

1944 ◽  
Vol 16 (5) ◽  
pp. 302-302 ◽  
Author(s):  
F S. Boericke ◽  
W M. Bangert
Keyword(s):  
Melting Furnace ◽  
Induction Melting ◽  
Controlled Atmosphere

Synthesis and Forming of Titanium Matrix Composites by Casting Route

2007 ◽  
Vol 334-335 ◽  
pp. 297-300
Author(s):  
Si Young Sung ◽  
Bong Jae Choi ◽  
Young Jig Kim
Keyword(s):  
Electron Microscopy ◽  
Melting Furnace ◽  
Vacuum Induction Melting ◽  
Induction Melting ◽  
Matrix Composites ◽  
Titanium Matrix ◽  
Titanium Matrix Composites ◽  
Electron Probe Micro Analyzer ◽  
Transmission Electron

The aim of this study is to evaluated the possibility of the in-situ synthesized (TiC+TiB) reinforced titanium matrix composites (TMCs) for the application of structural materials. In-situ synthesis and casting of TMCs were carried out in a vacuum induction melting furnace with Ti and B4C. The synthesized TMCs were characterized using scanning electron microscopy, an electron probe micro-analyzer and transmission electron microscopy, and evaluated through thermodynamic calculations. The spherical TiC plus needle-like and large, many-angled facet TiB reinforced TMCs can be synthesized with Ti and B4C by a melting route.

Cycling Stability Performance of La0.75Mg0.25Ni3.5Si0.10 Hydrogen Storage Alloy in Discharge–Charge System

2014 ◽  
Vol 13 (05n06) ◽  
pp. 1460003
Author(s):  
Zhaojiang Liu ◽  
Lei Huang ◽  
Qi Wan ◽  
Xu Li ◽  
Ma Guang ◽  
...  
Keyword(s):  
Hydrogen Storage ◽  
Electrochemical Properties ◽  
Melting Furnace ◽  
Test System ◽  
Cycling Stability ◽  
Hydrogen Storage Alloy ◽  
Vacuum Induction Melting ◽  
Induction Melting ◽  
Stability Performance ◽  
Charge Discharge

La 0.75 Mg 0.25 Ni 3.5 Si 0.10 hydrogen storage alloy was prepared by vacuum induction melting furnace and subsequently heated treatment at 940°C for 8 h and cooled to room temperature in the oven. The electrochemical properties of La 0.75 Mg 0.25 Ni 3.5 Si 0.10 compound were measured by LAND CT2001A battery test system. The morphologies of the samples were characterized by scanning electron microscopy (SEM). The surface state of samples was analyzed by X-ray photoelectron spectroscopy (XPS). It was found that the charge–discharge rate plays the key impact on the cycling stability of the alloy. During the cycle test, the prepared La 0.75 Mg 0.25 Ni 3.5 Si 0.10 compound presented an excellent capacity retention at the charge–discharge of 1 C while the capacity of sample declined rapidly at 0.2 C. The excellent cycling stability performance of La 0.75 Mg 0.25 Ni 3.5 Si 0.10 electrode at 1 C could be attributed to the less powder and less oxidation of surface effective active elements. The pulverization inevitably leads to the separation of the part of the cracking alloy and the electrode, resulting in reduction of the effective active substance and increasing attenuation of the capacity per cycle. In addition, on the analysis of the different cut-off potential effects on the electrode, it was found that the La 0.75 Mg 0.25 Ni 3.5 Si 0.10 electrode shows good comprehensive electrochemical properties at 1 C cut-off 0.6–0.7 V. During charging, heavy overcharge will not be conducive to cycling stability performance during the charging test.

Deformation of the Aluminum Bath Surface in an Induction Melting Furnace

2015 ◽  
pp. 999-1004
Author(s):  
Akshay Bansal ◽  
Pierre Chapelle ◽  
Yves Delannoy ◽  
Emmanuel Waz ◽  
Pierre Le Brun ◽  
...  
Keyword(s):  
Melting Furnace ◽  
Bath Surface ◽  
Induction Melting

Deformation of the Aluminum Bath Surface in an Induction Melting Furnace

2015 ◽  
pp. 997-1004
Author(s):  
Akshay Bansal ◽  
Pierre Chapelle ◽  
Yves Delannoy ◽  
Emmanuel Waz ◽  
Pierre Le Brun ◽  
...  
Keyword(s):  
Melting Furnace ◽  
Bath Surface ◽  
Induction Melting

Effects of Impurities Distribution on the Crystal Structure and Electrical Properties of Multi-Crystalline Silicon Ingots

2011 ◽  
Vol 675-677 ◽  
pp. 101-104
Author(s):  
Qi Zhi Xing ◽  
Wei Dong ◽  
Shu Ang Shi ◽  
Guo Bin Li ◽  
Yi Tan
Keyword(s):  
Electrical Properties ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Melting Furnace ◽  
Minority Carrier Lifetime ◽  
Vacuum Induction Melting ◽  
Induction Melting ◽  
Columnar Crystal ◽  
P Type ◽  
Crystal Region

Multi-crystalline silicon ingots were prepared by directional solidification using vacuum induction melting furnace. The content of aluminum and iron deeply decreased in the columnar crystal region of the multi-crystalline silicon ingots. The columnar crystal growth broke off corresponded to the iron contents sharply increased. The height of columnar crystal in the silicon ingots related to the pulling rates had been clarified by the constitutional supercooling theory. The maximum of the resistivity and the minority carrier lifetime closed to the transition zone where the conductive type changed from p-type to n-type in silicon ingots. Further analysis suggested that the electrical properties were related to the contents of shallow level impurities aluminum, boron and phosphorus.

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth

2012 ◽  
Vol 717-720 ◽  
pp. 37-40 ◽  
Author(s):  
Ta Ching Hsiao ◽  
Sheng Tsao
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Acid Leaching ◽  
Melting Furnace ◽  
Impurity Content ◽  
Low Pressure ◽  
Free Carbon ◽  
Vacuum Induction Melting ◽  
Carbide Formation ◽  
Induction Melting

Silicon carbide powders were prepared in a vacuum induction melting furnace (VIM). Silica and silicon were used as sources of silicon, and graphite powder was used a source of carbon. Pressures of 0.1 and 0.01 atm were selected as the operation conditions, and different silicon carbide powders were prepared. Free carbon and remnant silica were removed by high-temperature baking in air and acid leaching. Low-pressure powders show better crystallinity; moreover, free carbon and silica were rarely found in the product after baking and leaching. The low-pressure grains were prismatic whereas the high-pressure grains were porous. This shows that pressure is a critical parameter in silicon carbide formation, and low-pressure makes the low-temperature synthesis of silicon carbide feasible. Glow discharge mass spectra were used to analyze the impurity content in silicon carbide powders. After baking and leaching, the purity is increased from 3N5 (99.95 wt.%) to 4N5 (99.995 wt.%). Further purification procedures will be combined to meet the quality requirements for crystal growth.

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