Separation of xylenes on Y zeolites in the vapor phase. 3. Choice of the suitable desorbent

1985 ◽  
Vol 24 (1) ◽  
pp. 89-92 ◽  
Author(s):  
Giuseppe Storti ◽  
Elio Santacesaria ◽  
Massimo Morbidelli ◽  
Sergio Carra
Keyword(s):  
Vapor Phase ◽  
Phase 3 ◽  
Y Zeolites

Desulfurization of Commercial Jet Fuels by Adsorption via π-Complexation with Vapor Phase Ion Exchanged Cu(I)−Y Zeolites

2004 ◽  
Vol 43 (19) ◽  
pp. 6142-6149 ◽  
Author(s):  
Arturo J. Hernández-Maldonado ◽  
Ralph T. Yang ◽  
William Cannella
Keyword(s):  
Vapor Phase ◽  
Jet Fuels ◽  
Y Zeolites ◽  
Π Complexation

Separation of xylenes on Y zeolites in the vapor phase. 2. Breakthrough and pulse curves and their interpretation

1985 ◽  
Vol 24 (1) ◽  
pp. 83-88 ◽  
Author(s):  
Massimo Morbidelli ◽  
Elio Santacesaria ◽  
Giuseppe Storti ◽  
Sergio Carra
Keyword(s):  
Vapor Phase ◽  
Phase 2 ◽  
Y Zeolites

ChemInform Abstract: VAPOR-PHASE ESTERIFICATION CATALYZED BY DECATIONIZED Y ZEOLITES

1983 ◽  
Vol 14 (30) ◽  
Author(s):  
E. SANTACESARIA ◽  
D. GELOSA ◽  
P. DANISE ◽  
S. CARRA
Keyword(s):  
Vapor Phase ◽  
Y Zeolites

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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