Dynamic Quenching of Porous Silicon Excited States

1996 ◽  
Vol 8 (11) ◽  
pp. 2686-2692 ◽  
Author(s):  
Minh C. Ko ◽  
Gerald J. Meyer
Keyword(s):  
Porous Silicon ◽  
Excited States ◽  
Dynamic Quenching

ChemInform Abstract: Dynamic Quenching of Porous Silicon Excited States.

ChemInform ◽  
2010 ◽  
Vol 28 (8) ◽  
pp. no-no
Author(s):  
M. C. KO ◽  
G. J. MEYER
Keyword(s):  
Porous Silicon ◽  
Excited States ◽  
Dynamic Quenching

Photoluminescence Study of Radiative Recombination in Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Chun Wang ◽  
Franco Gaspari ◽  
Stefan Zukotynski
Keyword(s):  
Porous Silicon ◽  
Excited States ◽  
Ground State ◽  
Radiative Recombination ◽  
Single Electron ◽  
Photoluminescence Study ◽  
Recombination Centre ◽  
Electron Center ◽  
Recombination Centers

AbstractPhotoluminescence has been studied in porous silicon. Two types of radiative recombination centers have been identified. One gives rise to luminescence at about 820 nm and is believed to be related to Si-H bonds. The second gives rise to luminescence at about 770 nm and is likely associated with S-O bonds. Above about 20K radiative recombination is assisted by excited states of the recombination centre located about 10 meV above the ground state. The Si-H recombination centre is a single electron center whereas the Si-O center appears to be a multi-electron center.

Static and Dynamic Quenching of Ru(II) Polypyridyl Excited States by Iodide

2006 ◽  
Vol 45 (1) ◽  
pp. 362-369 ◽  
Author(s):  
Andras Marton ◽  
Christopher C. Clark ◽  
Ramya Srinivasan ◽  
Robert E. Freundlich ◽  
Amy A. Narducci Sarjeant ◽  
...  
Keyword(s):  
Excited States ◽  
Dynamic Quenching ◽  
Static And Dynamic Quenching

Vuv Spectra Y to Mo

1988 ◽  
Vol 102 ◽  
pp. 239
Author(s):  
M.S.Z. Chaghtai
Keyword(s):  
Excited States ◽  
Spectral Analyses ◽  
Vuv Spectra

Using R.D. Cowan’s computations (1979) and parametric calculations of Meinders et al (1982), old analyses are thoroughly revised and extended at Aligarh, of Zr III by Khan et al (1981), of Nb IV by Shujauddin et Chaghtai (1985), of Mo V by Tauheed at al (1985). Cabeza et al (1986) confirmed the last one largely.Extensive studies have been reported of the 1–e spectra, Zr IV (Rahimullah et al 1980; Acquista and Reader 1980), Nb V (Shujauddin et al 1982; Kagan et al 1981) and Mo VI (Edlén et al 1985). Some interacting 4p54d2levels of these spectra have been reported from our laboratory, also.Detailed spectral analyses of transitions between excited states have furnished complete energy values for J ≠ 1 levels of these spectra during 1970s and 80s. Shujauddin et al (1982) have worked out Nb VI and Tauheed et al (1984) Mo VII from our lab, while Khan et al (1981) share the work on Zr V with Reader and Acquista (1979).

Excited states of nuclei in -coupling

Physica ◽  
1952 ◽  
Vol 18 (2) ◽  
pp. 1101-1104
Author(s):  
B FLOWERS
Keyword(s):  
Excited States

Calculation of exchange energy in quantum dots : application to porous silicon

1993 ◽  
Vol 03 (C5) ◽  
pp. 355-358 ◽  
Author(s):  
G. FISHMAN ◽  
R. ROMESTAIN ◽  
J. C. VIAL
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Exchange Energy

ACCESS OF EXCITED STATES TO THE CONTINUUM

1985 ◽  
Vol 46 (C7) ◽  
pp. C7-409-C7-412 ◽  
Author(s):  
C. K. Jørgensen
Keyword(s):  
Excited States ◽  
The Continuum

GIANT RESONANCES BUILT ON HIGHLY EXCITED STATES

1984 ◽  
Vol 45 (C4) ◽  
pp. C4-337-C4-350 ◽  
Author(s):  
K. A. Snover
Keyword(s):  
Excited States ◽  
Giant Resonances
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