Fabrication of Core−Shell Structure of M@C (M=Se, Au, Ag2Se) and Transformation to Yolk−Shell Structure by Electron Beam Irradiation or Vacuum Annealing

2009 ◽  
Vol 21 (16) ◽  
pp. 3848-3852 ◽  
Author(s):  
Jixin Zhu ◽  
Ting Sun ◽  
Huey Hoon Hng ◽  
Jan Ma ◽  
Freddy Yin Chiang Boey ◽  
...  
Keyword(s):  
Electron Beam ◽  
Shell Structure ◽  
Electron Beam Irradiation ◽  
Vacuum Annealing ◽  
Core Shell ◽  
Beam Irradiation ◽  
Core Shell Structure

Chemical Transformation of Au-Tipped CdS Nanorods into AuS/Cd Core/Shell Particles by Electron Beam Irradiation

Nano Letters ◽  
2011 ◽  
Vol 11 (11) ◽  
pp. 4555-4561 ◽  
Author(s):  
Marijn A. van Huis ◽  
Albert Figuerola ◽  
Changming Fang ◽  
Armand Béché ◽  
Henny W. Zandbergen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Transformation ◽  
Electron Beam Irradiation ◽  
Core Shell ◽  
Beam Irradiation ◽  
Cds Nanorods ◽  
Shell Particles

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

Electrical Conductivity of Ni-YSZ Anode for SOFCs According to the Ni Powder Size Variations in Core-shell Structure

2015 ◽  
Vol 53 (4) ◽  
pp. 287-293
Author(s):  
Byung-Hyun Choi ◽  
Young Jin Kang ◽  
Sung-Hun Jung ◽  
Yong-Tae An ◽  
Mi-Jung Ji
Keyword(s):  
Electrical Conductivity ◽  
Shell Structure ◽  
Core Shell ◽  
Powder Size ◽  
Ni Powder ◽  
Core Shell Structure

Preparation of Porous Core/Shell Structure Fe$lt;inf$gt;2$lt;/inf$gt;O$lt;inf$gt;3$lt;/inf$gt;/Al Nanothermite Membrane by Template Method

2015 ◽  
Vol 30 (6) ◽  
pp. 610 ◽  
Author(s):  
ZHENG Guo-Qiang ◽  
ZHANG Wen-Chao ◽  
XU Xing ◽  
SHEN Rui-Qi ◽  
DENG Ji-Ping ◽  
...  
Keyword(s):  
Shell Structure ◽  
Template Method ◽  
Core Shell ◽  
Porous Core ◽  
Core Shell Structure

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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