Aqueous Solution Processing of F-Doped SnO2 Transparent Conducting Oxide Films Using a Reactive Tin(II) Hydroxide Nitrate Nanoscale Cluster

2013 ◽  
Vol 25 (20) ◽  
pp. 4080-4087 ◽  
Author(s):  
Athavan Nadarajah ◽  
Matthew E. Carnes ◽  
Matthew G. Kast ◽  
Darren W. Johnson ◽  
Shannon W. Boettcher
Keyword(s):  
Aqueous Solution ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Solution Processing ◽  
Transparent Conducting

Nanostructured Transparent Conducting Oxide Films for Polarization Control with Plasmonic Metasurfaces

CLEO: 2014 ◽  
2014 ◽  
Author(s):  
Jongbum Kim ◽  
Yang Zhao ◽  
Aveek Dutta ◽  
Sajid M. Choudhury ◽  
Alexander V. Kildishev ◽  
...  
Keyword(s):  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Polarization Control ◽  
Transparent Conducting

Properties of multilayer transparent conducting oxide films

2004 ◽  
Vol 461 (2) ◽  
pp. 309-315 ◽  
Author(s):  
E.J.J Martin ◽  
M Yan ◽  
M Lane ◽  
J Ireland ◽  
C.R Kannewurf ◽  
...  
Keyword(s):  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Transparent Conducting

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

Sol–gel versus sputtering indium tin oxide films as transparent conducting oxide materials

2016 ◽  
Vol 27 (5) ◽  
pp. 4913-4922 ◽  
Author(s):  
M. Duta ◽  
M. Anastasescu ◽  
J. M. Calderon-Moreno ◽  
L. Predoana ◽  
S. Preda ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Oxide Materials ◽  
Transparent Conducting ◽  
Tin Oxide Films

The Study of Transmittance and Conductivity by Top ZnO Thickness in ZnO/Ag/ZnO Transparent Conducting Oxide Films

2011 ◽  
Vol 4 (4) ◽  
pp. 1570-1573 ◽  
Author(s):  
Yun-Hae Kim ◽  
Do-Wan Kim ◽  
Ri-Ichi Murakami ◽  
Dongyan Zhang ◽  
Sung-Won Yoon ◽  
...  
Keyword(s):  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Transparent Conducting
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