Surfactant-Induced Nonhydrolytic Synthesis of Phase-Pure ZrO2 Nanoparticles from Metal–Organic and Oxocluster Precursors

2012 ◽  
Vol 24 (22) ◽  
pp. 4274-4282 ◽  
Author(s):  
Mahmoud A. Sliem ◽  
Diedrich A. Schmidt ◽  
Angélique Bétard ◽  
Suresh Babu Kalidindi ◽  
Silvia Gross ◽  
...  
2020 ◽  
Vol 7 (1) ◽  
pp. 221-231
Author(s):  
Seong Won Hong ◽  
Ju Won Paik ◽  
Dongju Seo ◽  
Jae-Min Oh ◽  
Young Kyu Jeong ◽  
...  

We successfully demonstrate that the chemical bath deposition (CBD) method is a versatile method for synthesizing phase-pure and uniform MOFs by controlling their nucleation stages and pore structures.


2015 ◽  
Vol 44 (32) ◽  
pp. 14272-14280 ◽  
Author(s):  
Georg Bendt ◽  
Anna Weber ◽  
Stefan Heimann ◽  
Wilfried Assenmacher ◽  
Oleg Prymak ◽  
...  

Thermolysis of metal organicsingle sourceanddual source precursorsyielded phase-pure BixTeynanoparticles at low temperatures.


Chemosphere ◽  
2018 ◽  
Vol 210 ◽  
pp. 907-916 ◽  
Author(s):  
Tao Liu ◽  
Jiankang Feng ◽  
Yuqiu Wan ◽  
Shourong Zheng ◽  
Liuyan Yang

CrystEngComm ◽  
2018 ◽  
Vol 20 (39) ◽  
pp. 5913-5918 ◽  
Author(s):  
Timur Islamoglu ◽  
Ken-ichi Otake ◽  
Peng Li ◽  
Cassandra T. Buru ◽  
Aaron W. Peters ◽  
...  

Synthesis and activation of phase-pure and defect-free metal–organic frameworks (MOFs) are essential for establishing accurate structure–property relationships.


2021 ◽  
Author(s):  
Dominic Bara ◽  
Emily Meekel ◽  
Ignas Pakamore ◽  
Claire Wilson ◽  
Sanliang Ling ◽  
...  

The synthesis of phase pure metal-organic frameworks (MOFs) – network solids of metal clusters connected by organic linkers – is often complicated by the possibility of forming multiple diverse phases...


2016 ◽  
Vol 108 (20) ◽  
pp. 202103 ◽  
Author(s):  
Xiaochuan Xia ◽  
Yuanpeng Chen ◽  
Qiuju Feng ◽  
Hongwei Liang ◽  
Pengcheng Tao ◽  
...  

Author(s):  
Jean-Pierre Jolivet

The dioxides of titanium (TiO2), manganese (MnO2), and zirconium (ZrO2) are important materials because of their technological uses. TiO2 is used mainly as white pigment. Because of its semiconducting properties, TiO2, in its nanomaterial form, is also used as an active component of photocells and photocatalysis for self-cleaning glasses and cements . MnO2 is used primarily in electrode materials. ZrO2 is used in refractory ceramics, abrasive materials, and stabilized zirconia as ionic conductive materials stable at high temperature. Many of these properties are, of course, dependent on particle size and shape (§ Chap. 1). Dioxides of other tetravalent elements with interesting properties have been studied elsewhere in this book, especially VO2, which exhibits a metal–isolator transition at 68°C, used, for instance, in optoelectronics (§ 4.1.5), and silica, SiO2 (§ 4.1.4), which is likely the most ubiquitous solid for many applications and uses. Aqueous chemistry is of major interest in synthesizing these oxides in the form of nanoparticles from inorganic salts and under simple, cheap, and envi­ronmental friendly conditions. However, as the tetravalent elements have re­stricted solubility in water (§ 2.2), metal–organic compounds such as titanium and zirconium alkoxides are frequently used in alcoholic solution as precursors for the synthesis of TiO2 and ZrO2 nanoparticles. An overview of the conversion of alkoxides into oxides is indicated about silica formation (§ 4.1.4), and since well-documented works have already been published, these compounds are not considered here. The crystal structures of most MO2 dioxides are of TiO2 rutile type for hexacoordinated cations (e.g., Ti, V, Cr, Mn, Mo, W, Sn, Pb) and CaF2 fluorite type for octacoordinated, larger cations (e.g., Zr, Ce), but polymorphism is common. Some dioxides of elements such as chromium and tin form only one crystal­line phase. So, hydrolysis of SnCl4 or acidification of stannate [Sn(OH)6]2− leads both to the same rutile-type phase, cassiterite, SnO2. Many other dioxides are polymorphic, especially TiO2, which exists in three main crystal phases: anatase, brookite, and rutile; and MnO2, which gives rise to a largely diversified crystal chemistry.


2019 ◽  
Vol 25 (59) ◽  
pp. 13598-13608 ◽  
Author(s):  
Marcel Schulz ◽  
Nele Marquardt ◽  
Malte Schäfer ◽  
Dawid Peter Warwas ◽  
Saskia Zailskas ◽  
...  

Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).


Author(s):  
J.L. Batstone

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).


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