Silicon Doping in Ba2In2O5: Example of a Beneficial Effect of Silicon Incorporation on Oxide Ion/Proton Conductivity

2010 ◽  
Vol 22 (21) ◽  
pp. 5945-5948 ◽  
Author(s):  
J. F. Shin ◽  
D. C. Apperley ◽  
P. R. Slater
Keyword(s):  
Beneficial Effect ◽  
Proton Conductivity ◽  
Silicon Doping ◽  
Ion Proton ◽  
Oxide Ion

scholarly journals Oxide Ion and Proton Conductivity in Highly Oxygen-Deficient Cubic Perovskite SrSc0.3Zn0.2Ga0.5O2.4

2020 ◽  
Vol 32 (10) ◽  
pp. 4347-4357 ◽  
Author(s):  
Chloe A. Fuller ◽  
Quentin Berrod ◽  
Bernhard Frick ◽  
Mark R. Johnson ◽  
Maxim Avdeev ◽  
...  
Keyword(s):  
Proton Conductivity ◽  
Oxide Ion

scholarly journals Materials AIILnInO4 with Ruddlesden-Popper Structure for Electrochemical Applications: Relationship between Ion (Oxygen-Ion, Proton) Conductivity, Water Uptake, and Structural Changes

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 114
Author(s):  
Nataliia Tarasova ◽  
Irina Animitsa
Keyword(s):  
Proton Conductivity ◽  
Structural Changes ◽  
Functional Materials ◽  
Proton Conductors ◽  
Point Of View ◽  
Ionic Conductors ◽  
Dry Air ◽  
Oxygen Ion ◽  
Ion Proton ◽  
Layered Perovskites

In this paper, the review of the new class of ionic conductors was made. For the last several years, the layered perovskites with Ruddlesden-Popper structure AIILnInO4 attracted attention from the point of view of possibility of the realization of ionic transport. The materials based on Ba(Sr)La(Nd)InO4 and the various doped compositions were investigated as oxygen-ion and proton conductors. It was found that doped and undoped layered perovskites BaNdInO4, SrLaInO4, and BaLaInO4 demonstrate mixed hole-ionic nature of conductivity in dry air. Acceptor and donor doping leads to a significant increase (up to ~1.5–2 orders of magnitude) of conductivity. One of the most conductive compositions BaNd0.9Ca0.1InO3.95 demonstrates the conductivity value of 5∙10−4 S/cm at 500 °C under dry air. The proton conductivity is realized under humid air at low (<500 °C) temperatures. The highest values of proton conductivity are attributed to the compositions BaNd0.9Ca0.1InO3.95 and Ba1.1La0.9InO3.95 (7.6∙10−6 and 3.2∙10−6 S/cm correspondingly at the 350 °C under wet air). The proton concentration is not correlated with the concentration of oxygen defects in the structure and it increases with an increase in the unit cell volume. The highest proton conductivity (with 95−98% of proton transport below 400 °C) for the materials based on BaLaInO4 was demonstrated by the compositions with dopant content no more that 0.1 mol. The layered perovskites AIILnInO4 are novel and prospective class of functional materials which can be used in the different electrochemical devices in the near future.

Analysis and Modeling of Novel Low-Temperature SOFC With a Co-Ionic Conducting Ceria-Based Composite Electrolyte

2009 ◽  
Vol 7 (1) ◽  
Author(s):  
Jianbing Huang ◽  
Jinliang Yuan ◽  
Zongqiang Mao ◽  
Bengt Sundén
Keyword(s):  
Fuel Cells ◽  
Fuel Cell ◽  
Low Temperature ◽  
Ionic Conductivities ◽  
Doped Ceria ◽  
Operating Characteristics ◽  
Composite Electrolyte ◽  
Ionic Conducting ◽  
Ion Proton ◽  
Oxide Ion

In recent years, ceria-based composites (CBCs) have been developed as electrolytes for low-temperature solid oxide fuel cells. These materials exhibit extremely high ionic conductivities at 400–600°C. It has also been found that both oxide ion and proton can be conducted in the CBC electrolytes, which makes such co-ionic conducting fuel cell distinct from any other types of fuel cells. In this study, a model involving three charge carriers (oxide ion, proton, and electron) is developed to describe the fuel cell with CBC electrolytes. Various operating characteristics of the fuel cell with CBC electrolytes are investigated, compared to those of the fuel cell with doped ceria electrolytes. The results indicate that the CBC electrolyte behaves as a pure ionic conductor, the cell is more efficient, and a higher output is expected at low temperatures under the same pressure operation than that of the cell with doped ceria electrolytes.

Oxide Ion and Proton Conductivity in a Family of Highly Oxygen-Deficient Perovskite Derivatives

2021 ◽  
Author(s):  
Chloe A. Fuller ◽  
Douglas A. Blom ◽  
Thomas Vogt ◽  
Ivana Radosavljevic Evans ◽  
John S. O. Evans
Keyword(s):  
Proton Conductivity ◽  
Oxide Ion

scholarly journals High oxide ion and proton conductivity in a disordered hexagonal perovskite

2020 ◽  
Vol 19 (7) ◽  
pp. 752-757 ◽  
Author(s):  
Sacha Fop ◽  
Kirstie S. McCombie ◽  
Eve J. Wildman ◽  
Jan M. S. Skakle ◽  
John T. S. Irvine ◽  
...  
Keyword(s):  
Proton Conductivity ◽  
Oxide Ion

Microstructures of Ti-1.5 w/o Ni Alloys with Mo and A1 Additions

1975 ◽  
Vol 33 ◽  
pp. 54-55
Author(s):  
Anna C. Fraker
Keyword(s):  
Corrosion Resistance ◽  
Beneficial Effect ◽  
Crevice Corrosion ◽  
Local Corrosion ◽  
Precipitate Size ◽  
Ni Alloys

Small amounts of nickel are added to titanium to improve the crevice corrosion resistance but this results in an alloy which has sheet fabrication difficulties and is subject to the formation of large Ti2Ni precipitates. These large precipitates can serve as local corrosion sites; but in a smaller more widely dispersed form, they can have a beneficial effect on crevice corrosion resistance. The purpose of the present work is to show that the addition of a small amount of Mo to the Ti-1.5Ni alloy reduces the Ti2Ni precipitate size and produces a more elongated grained microstructure. It has recently been reported that small additions of Mo to Ti-0.8 to lw/o Ni alloys produce good crevice corrosion resistance and improved fabrication properties.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

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