Size Control, Shape Evolution, and Silica Coating of Near-Infrared-Emitting PbSe Quantum Dots

2007 ◽  
Vol 19 (13) ◽  
pp. 3112-3117 ◽  
Author(s):  
Timothy T. Tan ◽  
S. Tamil Selvan ◽  
Lan Zhao ◽  
Shujun Gao ◽  
Jackie Y. Ying
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Size Control ◽  
Silica Coating ◽  
Shape Evolution

scholarly journals InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

2021 ◽  
Vol 8 ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Recent Work ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Size Control ◽  
Chemical Vapor ◽  
Metalorganic Chemical

This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.

scholarly journals Encapsulation of Dual Emitting Giant Quantum Dots in Silica Nanoparticles for Optical Ratiometric Temperature Nanosensors

2020 ◽  
Vol 10 (8) ◽  
pp. 2767 ◽  
Author(s):  
Elisabetta Fanizza ◽  
Haiguang Zhao ◽  
Simona De Zio ◽  
Nicoletta Depalo ◽  
Federico Rosei ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silica Nanoparticles ◽  
Near Infrared ◽  
Strong Dependence ◽  
Sio2 Nanoparticles ◽  
Silica Coating ◽  
Systematic Investigation ◽  
Dual Emission ◽  
Water Dispersible ◽  
Infrared Spectral

Accurate temperature measurements with a high spatial resolution for application in the biomedical fields demand novel nanosized thermometers with new advanced properties. Here, a water dispersible ratiometric temperature sensor is fabricated by encapsulating in silica nanoparticles, organic capped PbS@CdS@CdS “giant” quantum dots (GQDs), characterized by dual emission in the visible and near infrared spectral range, already assessed as efficient fluorescent nanothermometers. The chemical stability, easy surface functionalization, limited toxicity and transparency of the silica coating represent advantageous features for the realization of a nanoscale heterostructure suitable for temperature sensing. However, the strong dependence of the optical properties on the morphology of the final core–shell nanoparticle requires an accurate control of the encapsulation process. We carried out a systematic investigation of the synthetic conditions to achieve, by the microemulsion method, uniform and single core silica coated GQD (GQD@SiO2) nanoparticles and subsequently recorded temperature-dependent fluorescent spectra in the 281-313 K temperature range, suited for biological systems. The ratiometric response—the ratio between the two integrated PbS and CdS emission bands—is found to monotonically decrease with the temperature, showing a sensitivity comparable to bare GQDs, and thus confirming the effectiveness of the functionalization strategy and the potential of GQD@SiO2 in future biomedical applications.

Preparation of near‐infrared Ag 2 S quantum dots for detection of bisphenol A in water

2018 ◽  
Vol 13 (1) ◽  
pp. 112-116 ◽  
Author(s):  
Yanling Hu ◽  
Chun Deng ◽  
Yu He ◽  
Yili Ge ◽  
Gongwu Song
Keyword(s):  
Quantum Dots ◽  
Bisphenol A ◽  
Near Infrared

Electrically Driven Near-Infrared Broadband Light Source with Gaussian-Like Spectral Shape Based on Multiple InAs Quantum Dots

2016 ◽  
Vol E99.C (3) ◽  
pp. 381-384 ◽  
Author(s):  
Takuma YASUDA ◽  
Nobuhiko OZAKI ◽  
Hiroshi SHIBATA ◽  
Shunsuke OHKOUCHI ◽  
Naoki IKEDA ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Source ◽  
Near Infrared ◽  
Spectral Shape ◽  
Inas Quantum Dots ◽  
Broadband Light Source

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Employing CuInS2 quantum dots modified with vancomycin for detecting Staphylococcus aureus and iron(Ⅲ)

2021 ◽  
Author(s):  
Ziang Guo ◽  
Xiaowei Huang ◽  
Zhihua Li ◽  
Jiyong Shi ◽  
Xuetao Hu ◽  
...  
Keyword(s):  
Staphylococcus Aureus ◽  
Quantum Dots ◽  
Biological Tissue ◽  
Near Infrared ◽  
Cuins2 Quantum Dots ◽  
Tissue Permeability

This paper describes a Near-infrared quantum dots (CuInS2 QDs)/antibiotics (vancomycin) nanoparticle-based assay for Staphylococcus aureus and iron(Ⅲ) detection. CuInS2 QDs with good biological tissue permeability and biocompatibility are combined with...

scholarly journals Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes

2019 ◽  
Vol 28 (12) ◽  
pp. 128504 ◽  
Author(s):  
Haochen Liu ◽  
Huaying Zhong ◽  
Fankai Zheng ◽  
Yue Xie ◽  
Depeng Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Lead Chalcogenide ◽  
Light Emitting

Highly luminescent InP-In(Zn)P/ZnSe/ZnS core/shell/shell colloidal quantum dots with tunable emission synthesized based on growth-doping

2021 ◽  
Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Infrared Region ◽  
Colloidal Quantum Dots ◽  
High Quality ◽  
Promising Alternative ◽  
Lower Toxicity ◽  
Near Infrared Region ◽  
Inp Quantum Dots ◽  
Tunable Emission

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

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