Deposition of Bismuth Chalcogenide Thin Films Using Novel Single-Source Precursors by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 16 (17) ◽  
pp. 3289-3298 ◽  
Author(s):  
John Waters ◽  
David Crouch ◽  
James Raftery ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Single Source ◽  
Single Source Precursors ◽  
Metal Organic ◽  
Chalcogenide Thin Films ◽  
Organic Chemical Vapor Deposition

Metal-Organic Chemical Vapor Deposition (MOCVD) of GeSbTe-based Chalcogenide Thin Films

2007 ◽  
Vol 997 ◽  
Author(s):  
Gary S. Tompa ◽  
Shangzhu Sun ◽  
Catherine E Rice ◽  
Joe Cuchiaro ◽  
Edwin Dons
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Full Potential ◽  
Production Scale ◽  
Metal Organic ◽  
Chalcogenide Thin Films ◽  
Organic Chemical Vapor Deposition

AbstractChalcogenide Random Access Memory (C-RAM) has shown significant promise in combining the desired attributes of an ideal memory, including: nonvolatility, fast read/write/erase speed, low read/write/erase voltage/power, high endurance, and radiation hardness. Current C-RAM production technology relies on sputtering to deposit the active chalcogenide layer. The sputtering process leads to difficulties in meeting requirements for device conformality (in particular – filling vias), film adherence, compositional control, wafer yield, and surface damage. Ultimately, a viable CVD manufacturing process is needed for high-density products to realize the full potential of C-RAM. In this work, we discuss the Metal-Organic Chemical Vapor Deposition (MOCVD) tool technology used to produce the films and report the materials properties of GeSbTe-based chalcogenide thin films grown in small research scale and in large production scale MOCVD reactors. Films were grown at low pressures at temperatures ranging from 350 C to 600 C. X-Ray Fluorescence (XRF) and Auger Electron Spectroscopy (AES) were performed and determined that the film composition is controllable and uniform.

Sign in / Sign up

Export Citation Format

Share Document