Thermal Stability of Lithium Nickel Oxide Derivatives. Part I: LixNi1.02O2and LixNi0.89Al0.16O2(x= 0.50 and 0.30)

2003 ◽  
Vol 15 (23) ◽  
pp. 4476-4483 ◽  
Author(s):  
M. Guilmard ◽  
L. Croguennec ◽  
D. Denux ◽  
C. Delmas
Keyword(s):  
Thermal Stability ◽  
Nickel Oxide ◽  
Lithium Nickel Oxide ◽  
Thermal Stability Of

A Tailored Nickel Oxide Hole‐Transporting Layer to Improve the Long‐Term Thermal Stability of Inorganic Perovskite Solar Cells

Solar RRL ◽  
2019 ◽  
Vol 3 (11) ◽  
pp. 1900346 ◽  
Author(s):  
Weitao Chen ◽  
Shasha Zhang ◽  
Zhenghao Liu ◽  
Shaohang Wu ◽  
Rui Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solar Cells ◽  
Nickel Oxide ◽  
Perovskite Solar Cells ◽  
Inorganic Perovskite ◽  
Hole Transporting ◽  
Thermal Stability Of

scholarly journals Oxidation Mechanism of Nickel Oxide/Carbon Nanotube Composite

2013 ◽  
Vol 19 (S5) ◽  
pp. 202-206 ◽  
Author(s):  
Tae-Hoon Kim ◽  
Min-Ho Park ◽  
Jiho Ryu ◽  
Cheol-Woong Yang
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Thermal Stability ◽  
Carbon Nanotube ◽  
Nickel Oxide ◽  
Oxidation Mechanism ◽  
Transmission Electron ◽  
Carbon Nanotube Composite ◽  
Thermal Stability Of

AbstractThe oxidation mechanism and thermal stability of nickel oxide (NiO)/carbon nanotube (CNT) composites were investigated by examining composites with different NiO contents by thermogravimetric analysis and transmission electron microscopy (TEM). NiO acts as a catalyst in the oxidation of CNT in the composite. CNTs can be oxidized, even in a vacuum, by reducing NiO to nickel at temperatures lower than the normal oxidation temperature of CNTs. This phase transition was confirmed directly by in situ heating TEM observations. In air, reduction by CNT occurs simultaneously with reoxidation by gaseous O2 molecules, and NiO maintains its phase. The thermal stability decreased with increasing NiO content because of defects in the CNT generated by the NiO loading.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document