Surface Modification of Erbium-Doped Silicon Nanocrystals

2001 ◽  
Vol 13 (12) ◽  
pp. 4783-4786 ◽  
Author(s):  
Junmin Ji ◽  
Yandong Chen ◽  
Robert A. Senter ◽  
Jeffery L. Coffer
Keyword(s):  
Surface Modification ◽  
Silicon Nanocrystals ◽  
Erbium Doped ◽  
Doped Silicon

scholarly journals Erbium-doped silicon nanocrystals grown by r.f. sputtering method: Competition between oxygen and silicon to get erbium

2006 ◽  
Vol 28 (6-7) ◽  
pp. 836-841 ◽  
Author(s):  
M.F. Cerqueira ◽  
M. Stepikhova ◽  
M. Losurdo ◽  
M.M. Giangregorio ◽  
A. Kozanecki ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Erbium Doped ◽  
Doped Silicon

Correlating structure and photophysics in erbium-doped silicon nanocrystals

2002 ◽  
Author(s):  
Jeffrey L. Coffer ◽  
Robert A. Senter ◽  
Junmin Ji
Keyword(s):  
Silicon Nanocrystals ◽  
Erbium Doped ◽  
Doped Silicon

Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

2008 ◽  
Vol 92 (16) ◽  
pp. 161107 ◽  
Author(s):  
Maria Makarova ◽  
Vanessa Sih ◽  
Joe Warga ◽  
Rui Li ◽  
Luca Dal Negro ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Silicon Nanocrystals ◽  
Light Emission ◽  
Erbium Doped ◽  
Doped Silicon

ChemInform Abstract: Synthesis and Characterization of Discrete Luminescent Erbium-Doped Silicon Nanocrystals.

ChemInform ◽  
2010 ◽  
Vol 30 (22) ◽  
pp. no-no
Author(s):  
John St. John ◽  
Jeffery L. Coffer ◽  
Yandong Chen ◽  
Russell F. Pinizzotto
Keyword(s):  
Silicon Nanocrystals ◽  
Synthesis And Characterization ◽  
Erbium Doped ◽  
Doped Silicon

A Silicon-Based Infra-Red Photodetector Exploiting Erbium-Doped Silicon Nanocrystals

2003 ◽  
Vol 770 ◽  
Author(s):  
Anthony J. Kenyon ◽  
Sukhvinder S. Bhamber ◽  
Christopher W. Pitt
Keyword(s):  
Oxide Layer ◽  
Silicon Nanocrystals ◽  
Rare Earth Ions ◽  
Silicon Nanoclusters ◽  
Erbium Ions ◽  
Erbium Doped ◽  
Infra Red ◽  
Doped Silicon ◽  
Silicon Based ◽  
A Current

AbstractWe have exploited the interaction between erbium ions and silicon nanoclusters to produce a photodetector for use in the spectral region around 1.5 μm. The device consists of an MOS structure in which the oxide layer has been implanted with both erbium and silicon and annealed to produce silicon nanocrystals around 3 nm in diameter. Upon illumination with a 1480 nm laser diode, the well-known interaction between the nanocrystals and the rare-earth ions results in a transfer of excitation from the erbium ion to nearby silicon nanocrystals. The resultant modification of the conductivity of the oxide layer enables a current to flow when a voltage is applied.

Synthesis and Characterization of Discrete Luminescent Erbium-Doped Silicon Nanocrystals

1999 ◽  
Vol 121 (9) ◽  
pp. 1888-1892 ◽  
Author(s):  
John St. John ◽  
Jeffery L. Coffer ◽  
Yandong Chen ◽  
Russell F. Pinizzotto
Keyword(s):  
Silicon Nanocrystals ◽  
Synthesis And Characterization ◽  
Erbium Doped ◽  
Doped Silicon
Sign in / Sign up

Export Citation Format

Share Document