A Computational Method for Extracting Crystallization Growth and Nucleation Rate Data from Hot Stage Microscope Images

2009 ◽  
Vol 9 (12) ◽  
pp. 5061-5068 ◽  
Author(s):  
Andrew G. F. Stapley ◽  
Chrismono Himawan ◽  
William MacNaughtan ◽  
Timothy J. Foster
Keyword(s):  
Nucleation Rate ◽  
Computational Method ◽  
Rate Data ◽  
Microscope Images

Energetics of smalln-pentanol clusters from droplet nucleation rate data

2000 ◽  
Vol 112 (12) ◽  
pp. 5393-5398 ◽  
Author(s):  
Michael Knott ◽  
Hanna Vehkamäki ◽  
Ian J. Ford
Keyword(s):  
Nucleation Rate ◽  
Rate Data ◽  
Droplet Nucleation

Displacement barrier heights from experimental nucleation rate data

2008 ◽  
Vol 90 (2-4) ◽  
pp. 303-312 ◽  
Author(s):  
Jussi Malila ◽  
Antti-Pekka Hyvärinen ◽  
Yrjö Viisanen ◽  
Ari Laaksonen
Keyword(s):  
Nucleation Rate ◽  
Rate Data ◽  
Barrier Heights

Nucleation rates of droplets in supersaturated steam and water vapour–carrier gas mixtures between 200 and 450 K

2018 ◽  
Vol 232 (5) ◽  
pp. 536-549 ◽  
Author(s):  
Jan Hrubý ◽  
Michal Duška ◽  
Tomáš Němec ◽  
Michal Kolovratník
Keyword(s):  
Water Vapour ◽  
Nucleation Rate ◽  
Molecular Simulations ◽  
Temperature Trend ◽  
Nucleation Theory ◽  
Energy Conditions ◽  
Optical Data ◽  
Classical Nucleation Theory ◽  
Rate Data ◽  
Carrier Gases

We compare experimental nucleation rates for water vapour in various carrier gases, estimated nucleation rates for steam, and nucleation rates obtained from molecular simulations. The data for steam are deduced from empirical adjustments of the classical nucleation theory developed by various authors to reproduce pressure and optical data for condensing steam flows in converging-diverging nozzles and turbine stages. By combining the data for nucleation in carrier gases and the data for steam nucleation, an unprecedented temperature range of 250 K is available to study the temperature dependence of nucleation rate. Original results of molecular dynamic simulations for TIP4P/2005 force field in the NVE (system constrained by number of particles, volume and energy) conditions are provided. Correction of classical nucleation theory for non-isothermal nucleation conditions is applied to experimental and simulated data. The nucleation rate data for steam follow a similar temperature trend as the nucleation rate data for water vapour in carrier gases at lower temperatures. The ratio of observed nucleation rates to classical nucleation theory predictions decreases more steeply with temperature than the empirical correlation by Wölk et al. ( J Chem Phys 2002; 117: 4954–4960). On the contrary to experimental data, the ratios of nucleation rates computed from molecular simulations to classical nucleation theory predictions do not show a significant temperature trend.

Electron Microscope Observations of Magnetic and Electric Effects

1970 ◽  
Vol 28 ◽  
pp. 430-431
Author(s):  
John Silcox
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Magnetic Image ◽  
Magnetic Effects ◽  
Ferromagnetic Films ◽  
Diffraction Contrast ◽  
Microscope Images ◽  
Electric Effects ◽  
Image Detail

Several aspects of magnetic and electric effects in electron microscope images are of interest and will be discussed here. Clearly electrons are deflected by magnetic and electric fields and can give rise to image detail. We will review situations in ferromagnetic films in which magnetic image effects are the predominant ones, others in which the magnetic effects give rise to rather subtle changes in diffraction contrast, cases of contrast at specimen edges due to leakage fields in both ferromagnets and superconductors and some effects due to electric fields in insulators.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Simulation of three Dimensional Defect Images in Transmission Electron Microscopy

1976 ◽  
Vol 34 ◽  
pp. 470-471
Author(s):  
W. D. Cooper ◽  
C. S. Hartley ◽  
J. J. Hren
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Three Dimensional ◽  
Crystalline Lattice ◽  
Continuum Models ◽  
Thin Foils ◽  
Transmission Electron ◽  
Microscope Images ◽  
General Computer Program ◽  
General Computer

Interpretation of electron microscope images of crystalline lattice defects can be greatly aided by computer simulation of theoretical contrast from continuum models of such defects in thin foils. Several computer programs exist at the present time, but none are sufficiently general to permit their use as an aid in the identification of the range of defect types encountered in electron microscopy. This paper presents progress in the development of a more general computer program for this purpose which eliminates a number of restrictions contained in other programs. In particular, the program permits a variety of foil geometries and defect types to be simulated.The conventional approximation of non-interacting columns is employed for evaluation of the two-beam dynamical scattering equations by a piecewise solution of the Howie-Whelan equations.

Improved 3-D reconstruction using stereo computer graphics and multiple tilt EM images

1995 ◽  
Vol 53 ◽  
pp. 630-631
Author(s):  
Lee D. Peachey ◽  
Lou Fodor ◽  
John C. Haselgrove ◽  
Stanley M. Dunn ◽  
Junqing Huang
Keyword(s):  
Computer Graphics ◽  
High Performance ◽  
Transverse Section ◽  
Three Dimensional ◽  
Stereo Pair ◽  
3D Reconstructions ◽  
Video Cameras ◽  
Biological Objects ◽  
Microscope Images ◽  
High Performance Computer

Stereo pairs of electron microscope images provide valuable visual impressions of the three-dimensional nature of specimens, including biological objects. Beyond this one seeks quantitatively accurate models and measurements of the three dimensional positions and sizes of structures in the specimen. In our laboratory, we have sought to combine high resolution video cameras with high performance computer graphics systems to improve both the ease of building 3D reconstructions and the accuracy of 3D measurements, by using multiple tilt images of the same specimen tilted over a wider range of angles than can be viewed stereoscopically. Ultimately we also wish to automate the reconstruction and measurement process, and have initiated work in that direction.Figure 1 is a stereo pair of 400 kV images from a 1 micrometer thick transverse section of frog skeletal muscle stained with the Golgi stain. This stain selectively increases the density of the transverse tubular network in these muscle cells, and it is this network that we reconstruct in this example.

Distortion in lattice-resolution scanned-probe microscope images

1993 ◽  
Vol 51 ◽  
pp. 522-523
Author(s):  
L. Fei
Keyword(s):  
Film Studies ◽  
Lattice Structure ◽  
Substrate Material ◽  
Repulsive Force ◽  
Instrument Calibration ◽  
Microscope Images ◽  
Probe Microscope ◽  
Electron Microscopes ◽  
Diffraction Patterns ◽  
Lattice Resolution

Scanned probe microscopes (SPM) have been widely used for studying the structure of a variety material surfaces and thin films. Interpretation of SPM images, however, remains a debatable subject at best. Unlike electron microscopes (EMs) where diffraction patterns and images regularly provide data on lattice spacings and angles within 1-2% and ∽1° accuracy, our experience indicates that lattice distances and angles in raw SPM images can be off by as much as 10% and ∽6°, respectively. Because SPM images can be affected by processes like the coupling between fast and slow scan direction, hysteresis of piezoelectric scanner, thermal drift, anisotropic tip and sample interaction, etc., the causes for such a large discrepancy maybe complex even though manufacturers suggest that the correction can be done through only instrument calibration.We show here that scanning repulsive force microscope (SFM or AFM) images of freshly cleaved mica, a substrate material used for thin film studies as well as for SFM instrument calibration, are distorted compared with the lattice structure expected for mica.

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