Epitaxial Tetrathiafulvalene–Tetracyanoquinodimethane Thin Films on KCl(100): New Preparation Methods and Observation of Interface-Mediated Thin Film Polymorph

2014 ◽  
Vol 15 (1) ◽  
pp. 395-403 ◽  
Author(s):  
Alexander Mänz ◽  
Tobias Breuer ◽  
Gregor Witte
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Preparation Methods

scholarly journals Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

2020 ◽  
Vol 10 (4) ◽  
pp. 1320 ◽  
Author(s):  
Xiaoyan Liu ◽  
Mingmin Shi ◽  
Yuhao Luo ◽  
Lvyang Zhou ◽  
Zhi Rong Loh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sustainable Development ◽  
Resistive Switching ◽  
Electronic Waste ◽  
Electronic Devices ◽  
Preparation Methods ◽  
Von Neumann ◽  
Environmental Friendly ◽  
Switching Devices

The environmental pollution generated by electronic waste (e-waste), waste-gas, and wastewater restricts the sustainable development of society. Environmental-friendly electronics made of degradable, resorbable, and compatible thin-film materials were utilized and explored, which was beneficial for e-waste dissolution and sustainable development. In this paper, we present a literature review about the development of various degradable and disposable thin-films for electronic applications. The corresponding preparation methods were simply reviewed and one of the most exciting and promising methods was discussed: Printing electronics technology. After a short introduction, detailed applications in the environment sensors and eco-friendly devices based on these degradable and compatible thin-films were mainly reviewed, finalizing with the main conclusions and promising perspectives. Furthermore, the future on these upcoming environmental-friendly electronic devices are proposed and prospected, especially on resistive switching devices, showing great potential applications in artificial intelligence (AI) and the Internet of Thing (IoT). These resistive switching devices combine the functions of storage and computations, which can complement the off-shelf computing based on the von Neumann architecture and advance the development of the AI.

Iron Pnictide Thin Film Hybrid Josephson Junctions

2010 ◽  
Vol 75 ◽  
pp. 136-140 ◽  
Author(s):  
Paul Seidel ◽  
Frank Schmidl ◽  
Veit Grosse ◽  
Sebastian Döring ◽  
Stefan Schmidt ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transition Temperature ◽  
Josephson Junctions ◽  
Counter Electrode ◽  
Iron Pnictides ◽  
Preparation Methods ◽  
Iron Pnictide ◽  
First Results ◽  
The Way

Thin films of iron pnictides open the way for fundamental experiments on superconductivity in this material. Thus we started to develop tunneling and Josephson junctions with pnictide film electrodes. Different preparation methods for Josephson junctions were investigated and the first results are presented. Resistive measurements show a high superconductive transition temperature of about 20 K even for the La-1111 electrode after patterning and preparation of the tunneling window. The hybrid junctions were completed with a PbIn counter electrode and normal conducting gold layers as barriers.

Preparation of Bi-based photocatalysts in the form of powdered particles and thin films: a review

2020 ◽  
Vol 8 (31) ◽  
pp. 15302-15318 ◽  
Author(s):  
Xuelian Wu ◽  
Cui Ying Toe ◽  
Chenliang Su ◽  
Yun Hau Ng ◽  
Rose Amal ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Preparation Methods ◽  
Comprehensive Survey

A comprehensive survey on preparation methods of powdered or thin-film Bi-based photocatalysts is provided, comparing he diverse approaches and their advantages and limitations in the context of photocatalytic and photoelectrochemical applications.

Development of SnS Thin Films for Solar Cells

2014 ◽  
Vol 556-562 ◽  
pp. 278-281
Author(s):  
Zhi Gang Wang ◽  
Wen Cheng Gao ◽  
Jing Li ◽  
Ke Gao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Spectrum ◽  
Preparation Methods ◽  
Earth Abundant ◽  
High Absorption Coefficient ◽  
Sns Thin Films ◽  
Development Tendency ◽  
Photovoltaic Material

SnS thin film, a potential earth-abundant photovoltaic material, has particularly generated interest because of its nontoxic nature, the band gap of it matches well with solar spectrum and its high absorption coefficient. It provides a brief description of the development of SnS thin film for solar cells, and surveys several preparation methods of SnS thin film, then introduces the crystal structure of SnS. The effects of different doping elements and concentrations for SnS thin film on performance were outlined, and the development and the structure of solar cells based on SnS thin films were discussed. Finally, the development tendency and prospects were predicted.

Recent Progress in Microcrystalline Semiconductor Thin Films

1996 ◽  
Vol 452 ◽  
Author(s):  
K. Tanaka
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Recent Progress ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Film Structure ◽  
Preparation Methods ◽  
Active Layers ◽  
Semiconductor Thin Films ◽  
Si Films

AbstractNanocrystalline/microcrystalline thin films prepared at relatively low temperatures by plasma-enhanced chemical vapor deposition (PECVD), in particular hydrogenated microcrystalline Si films (μc-Si:H), have attracted an increasing attention not only as potential materials for thin film solar cells, but also as active layers in thin film transistor arrays for flat panel displays. This paper reviews recent progress in the investigation of these materials; preparation methods, structural and optical properties, and electronic transports. Emphasis is placed on the understanding of the growth mechanism of μc-Si:H films as well as the microscopic characterization of the film structure.

The Research and Application Progress of Vanadium Dioxide Thin Films

2013 ◽  
Vol 320 ◽  
pp. 287-295
Author(s):  
Jian Ping Long ◽  
Mi Jiang ◽  
Xin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Material ◽  
Sol Gel ◽  
Chemical Vapor ◽  
Preparation Methods ◽  
Smart Windows ◽  
Protective Films ◽  
Thin Film Preparation ◽  
Application Fields

The VO2thin film is a kind of functional material with phase transition properties, and has broad application prospects. In this paper, the main VO2thin film preparation methods of sputtering, chemical vapor deposition, sol-gel method and the research status of electrical properties, optical properties , phase change properties and the calculation theory study were summarized. The main application fields and application progress of the VO2thin films in the smart windows, the infrared pulse laser protective films, the photonic crystal, the dielectric material of CD, the material of optical and electrical switch were introduced.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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