Toward Single-Crystal Hybrid-Carbon Electronics: Impact of Graphene Substrate Defect Density on Copper Phthalocyanine Film Growth

2014 ◽  
Vol 14 (9) ◽  
pp. 4394-4401 ◽  
Author(s):  
Terry McAfee ◽  
Eliot Gann ◽  
Tianshuai Guan ◽  
Sean C. Stuart ◽  
Jack Rowe ◽  
...  
Keyword(s):  
Single Crystal ◽  
Film Growth ◽  
Copper Phthalocyanine ◽  
Defect Density ◽  
Hybrid Carbon ◽  
Carbon Electronics

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth

Diamond Films: Recent Developments in Theory and Practice

MRS Bulletin ◽  
1998 ◽  
Vol 23 (9) ◽  
pp. 28-31 ◽  
Author(s):  
A.M. Stoneham ◽  
I.J. Ford ◽  
P.R. Chalker
Keyword(s):  
Film Growth ◽  
Defect Density ◽  
Diamond Films ◽  
Electrical Contacts ◽  
Film Deposition ◽  
Theory And Practice ◽  
Maximum Effect ◽  
Recent Developments ◽  
Improved Performance ◽  
The Many

The diamond films of the early 1980s presented two quite different challenges. First how could this new form of diamond be exploited technically? Second, how could this clearly nonequilibrium generation of diamond be understood and the understanding be used to maximum effect? We shall be discussing the ideas of theory and modeling, and we will show how they have contributed to the interplay of science and technology.The science of diamond films is the art of beating nature in the use of carbon. Theory gives the understanding to improve this art. One way in which we improve on nature is in new geometries: controlled growth over selected surfaces o surface regions. The coverage, defect density, microstructure, and rate of growth are key issues. Another way to beat nature is controlled doping. Could wmake n-type semiconductors or lasers using diamond films? A third direction might be routes to control interfaces. Grai boundaries and the regions between small, misaligned crystals affect thermal properties and electron emission. Difficulties with electrical contacts may limit the use of diamond films as semiconductors or insulators. Substrate-film adhesion can determine tribological performance.If theory is to play a role in controlling film deposition, we need to understand the role of theory itself. Theory can add value at several distinct levels. At the highest level, modeling has the potential to provide a substitute for experiment, especially when information is needed about behavior at extreme conditions. When the phenomena are very fast or very complex, theory can be used to interpret limited experiments. At a more modest level, even simple quantitative models can illustrate the many processes occurring during film growth. Atomistic theories of this type can identify the rate-determining steps and point to ways of influencing them. Mesoscopic theories, especially combined with macroscopic approaches like elasticity theory, can identify routes to improved performance.

INTERACTIONS AT METAL/OXIDE AND OXIDE/OXIDE INTERFACES STUDIED BY ULTRATHIN FILM GROWTH ON SINGLE-CRYSTAL OXIDE SUBSTRATES

1995 ◽  
Vol 02 (01) ◽  
pp. 109-126 ◽  
Author(s):  
ROBERT J. LAD
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Film Growth ◽  
Ultrathin Film ◽  
Reaction Products ◽  
Impurity Effects ◽  
Crystal Surfaces ◽  
Oxide Interfaces ◽  
Single Crystal Surfaces ◽  
Oxide Substrates

This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometric NiO (100), TiO 2(110), and [Formula: see text] surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.

Rapid growth of large-area single-crystal graphene film by seamless stitching using resolidified copper foil on a molybdenum substrate

2019 ◽  
Vol 7 (31) ◽  
pp. 18373-18379 ◽  
Author(s):  
Yuan Cheng ◽  
Hui Bi ◽  
Xiangli Che ◽  
Wei Zhao ◽  
Dezeng Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Rapid Growth ◽  
Copper Foil ◽  
Film Growth ◽  
Graphene Film ◽  
Large Area ◽  
Molybdenum Substrate ◽  
Oriented Single Crystal

Single-crystal graphene film growth by the seamless stitching of highly oriented single-crystal graphene domains on a resolidified Cu (111) surface.

Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

1993 ◽  
Vol 297 ◽  
Author(s):  
Hitoshi Nishio ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Diffusion Coefficient ◽  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Film Growth ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Device Fabrication ◽  
Surface Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

scholarly journals Irradiated cubic single crystal SiC as a high temperature sensor

2003 ◽  
Vol 792 ◽  
Author(s):  
Alex A. Volinsky ◽  
Lev Ginzbursky
Keyword(s):  
Single Crystal ◽  
Film Growth ◽  
Space Shuttle ◽  
Turbine Blades ◽  
Maximum Temperature ◽  
X Ray Diffraction ◽  
Ceramic Tiles ◽  
X Ray ◽  
Single Crystal Sic ◽  
Technology Modeling

ABSTRACTRadiation is known to cause point defects formation in different materials. In the case of cubic SiC single crystal radiation flux on the order of 2·1020 neutrons/cm2 at 0.18 MeV causes over 3% volume lattice expansion. Radiation-induced strain (measurable by X-Ray diffraction) can be relieved when the annealing temperature exceeds the temperature of irradiation. Based on this effect the original technology of maximum temperature measurement was developed a while ago. Single crystal SiC sensor small size (200–500 microns), wide temperature range (150–1450 °C), “no-lead” installation, and exceptional accuracy make it very attractive for use in small, rotating and “hard-to-access” parts, including, but not limited to gas turbine blades, space shuttle ceramic tiles, automobile engines, etc. With the advances in X-Ray diffraction measurements, crystal and thin film growth techniques, it is the time to revise and update this technology. Modeling radiation damage, as well as annealing effects are also beneficial.

A Review of Recent Results on Single Crystal Metastable Semiconducfors: Crystal Growth, Phase Stability, and Physical Properties

1984 ◽  
Vol 37 ◽  
Author(s):  
S. A. Barnett ◽  
B. Kramer ◽  
L. T. Romano ◽  
S. I. Shah ◽  
M. A. Ray ◽  
...  
Keyword(s):  
Physical Properties ◽  
Single Crystal ◽  
Film Growth ◽  
Critical Role ◽  
Range Order ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Preferential Sputtering ◽  
Pseudobinary Phase Diagram ◽  
Semiconducting Alloys

AbstractRecent results on metastable semiconducting alloys, concerning in particular the growth of new Sn-based alloys (GaSb)1−x(Sn2)x and Gel−xSnx and the physical properties of (GaAs)1−x(Ge2)x and (GaSb)1−x(Ge2)x, are discussed. (GaSb)1−x(Sn2)x and Ge1−xSnx alloy films were grown with x-values as high as 0.20 and 0.15, respectively, well in excess of equilibrium Sn solid solubility limits (<1%) while epitaxial (GaAs)1−x(Ge2) and (GaSb)1−x(Ge2)x alloys were obtained on (100) GaAs at compositions ranging across the pseudobinary phase diagram. Low energy ion bombardment induced collisional mixing and preferential sputtering during film growth played a critical role in obtaining single phase alloys. An optimal ion energy, which depended on the ion flux and the alloy composition, was determined, allowing in most cases growth at temperatures T, sufficient for obtaining single crystal alloys on (100) GaAs and (100) Ge substrates. Decomposition of the Sn-based alloys occurred above a critical Ts- value via α-Sn-rich precipitates which were stable above the β-Sn melting point. X-ray diffraction, STEM, EXAFS, and Raman spectroscopy measurements, performed on single crystal (GaAs)1−x(Ge2)x and (GaSb)1−x(Ge2)x alloys, indicate that there is a transition in the long-range order from zincblende to diamond with increasing x while the short-range order remains perfect at all compositions, i.e. no V-V or III-Ill bonds are observed. These results are discussed in light of recent models which relate (GaAs)1−x(Ge2)x atomic structure to its band structure and optical properties.

Control of Materials and Interfaces in μc-Si:H-based Solar Cells Grown at High Rate

2011 ◽  
Vol 1321 ◽  
Author(s):  
Yasushi Sobajima ◽  
Chitose Sada ◽  
Akihisa Matsuda ◽  
Hiroaki Okamoto
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Film Growth ◽  
Defect Density ◽  
Density Measurement ◽  
High Growth ◽  
High Growth Rate ◽  
High Rate ◽  
Bulk Region ◽  
Dangling Bond

ABSTRACTGrowth process of microcrystalline silicon (μc-Si:H) using plasma-enhanced chemicalvapor- deposition method under high-rate-growth condition has been studied for the control of optoelectronic properties in the resulting materials. We have found two important things for the spatial-defect distribution in the resulting μc-Si:H through a precise dangling-bond-density measurement, e. g., (1) dangling-bond defects are uniformly distributed in the bulk region of μc- Si:H films independent of their crystallite size and (2) large number of dangling bonds are located at the surface of μc-Si:H especially when the film is deposited at high growth rate. Starting procedure of film growth has been investigated as an important process to control the dangling-bond-defect density in the bulk region of resulting μc-Si:H through the change in the electron temperature by the presence of particulates produced at the starting period of the plasma. Deposition of Si-compress thin layer on μc-Si:H grown at high rate followed by thermal annealing has been proposed as an effective method to reduce the defect density at the surface of resulting μc-Si:H. Utilizing the starting-procedure-controlling method and the compress-layerdeposition method together with several interface-controlling methods, we have demonstrated the fabrication of high conversion-efficiency (9.27%) substrate-type (n-i-p) μc-Si:H solar cells whose intrinsic μc-Si:H layer is deposited at high growth rate of 2.3 nm/sec.

Growth of Large-Diameter CdZnTe and CdTeSe Boules for Hg1−xCdxTe Epitaxy: Status and Prospects

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Sen ◽  
S.M. Johnson ◽  
J.A. Kiele ◽  
W.H. Konkel ◽  
J.E. Stannard
Keyword(s):  
Single Crystal ◽  
Defect Density ◽  
Large Diameter ◽  
Cylindrical Body ◽  
Growth Conditions ◽  
Grain Structure ◽  
Current Status ◽  
Conductive Heat ◽  
Large Area ◽  
Ir Detector

ABSTRACTSingle crystals of CdTe or dilute alloys of Cd1−yZnyTe (y ≤ 0.04) and CdTe1−zSez (z ≤ 0.04) with low defect density and large single-crystal area (>30 cm2) are required as substrates for high-quality epitaxial Hg1−xCdxTe thin films in the infrared (IR) detector industry. Bridgman or gradient freeze has been the most common current technique used for growing these materials. This paper reviews the current status and the evolution at SBRC of one variation of the Bridgman technique, viz., vertical-modified Bridgman (VMB), for producing large-area substrates with excellent uniformity and reproducibility. CdTe, Cd1−yZnyTe (y ≤ 0.04) and CdTe1−zSez (z ≤ 0.04) boules of 5-to 7.5-cm diameter have been grown unseeded in the present version of the VMB growth system. In general, under optimum growth conditions, the boules have the smallest grain structure (several grains) at the tip end with enhancement of grain selection as the cylindrical body of the boule is approached, resulting in one predominant and large grain occupying 70 to 80 percent of the entire boule volume; {111}-oriented Cd1−yZnyTe and CdTe1−zSez substrates with single-crystal areas as large as 50 to 60 cm2 have been obtained from these boules. Crystal quality characterized by x-ray rocking curve, IR transmission (2.5 to 20 µm), low-temperature photoluminescence, and Hall-effect measurements as a function of temperature, showed a strong correlation with the starting material quality (especially that of elemental Te and Se). Analyses of the thermal history during growth reveals that the presence of the ampoule (with charge) increases the temperature inside the furnace by 10 to 15 degrees. The temperature gradient at the tip was measured to be 8 to 10°C/cm and it dropped to 4 to 5°C/cm beyond 2.5 cm from the tip - where rapid enhancement of grain selection takes place in most boules. The effect of this temperature rise on the initial crystallization near the tip of a boule can be explained from the numerical thermal model that was developed for the growth process with radiative and conductive heat transfer included and using a temperature profile similar to that existing in the actual growth furnace. Conditions for maximizing the fraction solidifying with a slightly convex interface, hence maximizing the single-crystal yield are discussed.

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