Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

2014 ◽  
Vol 14 (3) ◽  
pp. 1272-1278 ◽  
Author(s):  
Bing Gao ◽  
Koichi Kakimoto
CrystEngComm ◽  
2022 ◽  
Author(s):  
Ruichen Bai ◽  
Bao Xiao ◽  
Fangpei Li ◽  
Xin Liu ◽  
Shouzhi Xi ◽  
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AVBVICVII ternary compounds with special structure show strong anisotropy, which can be attributed to the double chains along b axis. The crystals have attracted widespread interests because of their unique...


2016 ◽  
Vol 450 ◽  
pp. 96-102 ◽  
Author(s):  
Priyanthi M. Amarasinghe ◽  
Joo-Soo Kim ◽  
Henry Chen ◽  
Sudhir Trivedi ◽  
Syed B. Qadri ◽  
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