A New Family of 3d–4f Heterometallic Tetrazole-based Coordination Frameworks: In Situ Tetrazole Ligand Synthesis, Structure, Luminescence, and Magnetic Properties

2012 ◽  
Vol 12 (3) ◽  
pp. 1151-1158 ◽  
Author(s):  
Li Liang ◽  
Guo Peng ◽  
Li Ma ◽  
Lin Sun ◽  
Hong Deng ◽  
...  
2011 ◽  
Vol 2011 (23) ◽  
pp. 3446-3453 ◽  
Author(s):  
Li Ma ◽  
Yong-Cai Qiu ◽  
Guo Peng ◽  
Jin-Biao Cai ◽  
Hong Deng

CrystEngComm ◽  
2015 ◽  
Vol 17 (30) ◽  
pp. 5814-5831 ◽  
Author(s):  
Ruo Ting Dong ◽  
Zhao Ying Ma ◽  
Li Xin Chen ◽  
Lan Fen Huang ◽  
Qian Hong Li ◽  
...  

Seven zinc and cadmium coordination frameworks were obtained through in situ tetrazole synthesis. By varying the hydrothermal conditions the unprecedented generation of tetrazole ligands were achieved.


2010 ◽  
Vol 13 (6) ◽  
pp. 749-752 ◽  
Author(s):  
Yongcai Qiu ◽  
Biao Liu ◽  
Guo Peng ◽  
Jinbiao Cai ◽  
Hong Deng ◽  
...  

Author(s):  
Mario Falsaperna ◽  
Gavin B G Stenning ◽  
Ivan da Silva ◽  
Paul James Saines

This study probes the structure and the magnetic properties of members of the Ln(HCO2)(C2O4) (Ln = Sm3+-Er3+) family of coordination frameworks. These frameworks adopt a Pnma orthorhombic structure with one-dimensional...


Carbon ◽  
2013 ◽  
Vol 61 ◽  
pp. 647-649 ◽  
Author(s):  
Qingze Jiao ◽  
Liang Hao ◽  
Qingyan Shao ◽  
Yun Zhao

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.


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