Domain Matching Epitaxy of Mg-Containing Ag Contact onp-Type GaN

2011 ◽  
Vol 11 (6) ◽  
pp. 2559-2563 ◽  
Author(s):  
Yang Hee Song ◽  
Jun Ho Son ◽  
Hak Ki Yu ◽  
Ju Ho Lee ◽  
Gwan Ho Jung ◽  
...  
Keyword(s):  
Domain Matching Epitaxy ◽  
Ag Contact

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Synthese von zweikernigen Triazenido- und Pentaazadienidokomplexen des einwertigen Silbers. Kristallstruktur von [Ag(MeOC6H4N3C6H4OM e)]2· 2/3 Py, [Ag(MeOC6H4N5C6H4OMe)]2 und [Ag(EtOC6H4N5C6H4OEt)]2 · Py / Dimeric Triazenido and Pentaazadienido Complexes of Monovalent Silver. Synthesis and Structure of [Ag(MeOC6H4N3C6H4OM e)]2· 2/3 Pyridine, [Ag(MeOC6H4N5C6H4OMe)]2 und [Ag(EtOC6H4N5C6H4OEt)]2 · Pyridine

1989 ◽  
Vol 44 (7) ◽  
pp. 778-785 ◽  
Author(s):  
Edmund Hartmann ◽  
Raimund Schmid ◽  
Joachim Strähle
Keyword(s):  
Unit Cell ◽  
Dinuclear Complexes ◽  
Monoclinic Space Group ◽  
Triclinic Space Group ◽  
Space Group ◽  
Bridging Ligand ◽  
Orange Yellow ◽  
Ag Contact ◽  
Saturated Solutions

[Ag(MeOC6H4N3C6H4OMe)]2 (1) is formed in THF from AgNO3 , and the triazenide anion, as obtained from the corresponding triazene and Na. 1 crystallizes from pyridine in the form of orange-yellow , air stable crystals with the com position 1·2/3 C5H5N: space group P 1̅ with a = 1468.0(5), b = 1514.1(6), c - 1316.1(3) pm, a = 113.45(3)°, β = 1 1 4 .8 1 (2 )°, γ = 66.78(3)°, Z - 3. The triazenide ion functions as a bridging ligand forming planar (AgN3)2 heterocycles. The unit cell contains two symmetry-independent dinuclear complexes, one of which is centrosymmetrical. The short Ag -Ag distances of 268.0 and 269.8 pm suggest Ag -Ag bonding. The pentaazadienido complexes Ag(RN5R) with R = p -MeO - C6H4 (2), p -EtO - C6H4 (3), p-Cl -C6H4 (4), p -F -C6H4 (5), are obtained from saturated solutions of the pentaazadiene in conc. NH3 and AgNO3 , as explosive, red precipitates which are stable in air. Crystals of 2 and 3 · C5H5N are obtained from pyridine. 2 crystallizes in the monoclinic space group P21/c: a - 583.7(6), b = 1705.1(9), c = 1489.6(9) pm. β = 96.2(1)°, Z = 2; 3 · C5H5N is triclinic (space group P 1̅) with a = 1160.4(4). b = 1671.0(6), c = 509.0(1) pm. a = 97.51(2)°, β = 97.36(2)°, γ = 81.51(3)°, Z = 1. The complexes 2 and 3 are dinuclear with the pentaazadienide ion as a (N1)-η1,(N5)-η1 bridging ligand in 2 and a (N1)-η1, (N3)-η1 bridging ligand in 3. The bridging mode in 3 results in a short Ag -Ag contact of 283.44 pm. The Ag -N distances range from 210.8 to 215.7 pm in 1 and from 215.0 to 220 pm in (2) and (3).

Time-Resolved Switching Studies in a-Si:H and Related Films

2003 ◽  
Vol 762 ◽  
Author(s):  
P. Stradins ◽  
W. B. Jackson ◽  
H. M. Branz ◽  
J. Hu ◽  
C.L. Perkins ◽  
...  
Keyword(s):  
Local Heating ◽  
Charge Trapping ◽  
Atomic Diffusion ◽  
Latency Time ◽  
Time Resolved ◽  
Wide Bandgap Material ◽  
Precursor Phase ◽  
Two Phases ◽  
Pulse Polarity ◽  
Ag Contact

AbstractSwitching in a-Si:H and a-Si:HNx layers is investigated by pulse current transient and Auger scanning microspectroscopy measurements. Switching in a-Si:H with Ag and Cr contacts exhibits 2 different regimes depending on the voltage pulse polarity. With a positive top Ag contact, switching occurs in nanoseconds after a certain latency time, which depends on voltage exponentially. For a negative Ag contact, there is no latency time provided the voltage exceeds a certain critical value. This might be related to interface effects on contact properties or field-assisted metal diffusion. Scanning Auger element micromaps reveal metallic filaments in the switched films. They contain both Ag and Cr throughout the film thickness. Two phases of the filament formation are suggested – a precursor phase and a post-switching phase characterized by local heating and atomic diffusion. Soft and hard switching are observed in a-Si:HNx films simultaneously and their rates depend strongly on the contact material and applied voltage. Soft switching might be related to the charge trapping in this wide bandgap material.

Laser Processing, Characterization, and Modeling of Epitaxial Si/TiN/Si (100) Heterostructures

1992 ◽  
Vol 285 ◽  
Author(s):  
Rina Chowdhury ◽  
X. Chen ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Integrated Circuits ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Domain Matching Epitaxy ◽  
Large Lattice ◽  
Unit Cells ◽  
Potential Applications ◽  
Large Lattice Mismatch ◽  
Radiation Hard

ABSTRACTWe have successfully deposited multilayer Si/ITiN/Si(100) epitaxial heterostructures at a substrate temperature of 600°C in a chamber maintained at a vacuum of ∼10−7 torr using pulsed laser (KrF: λ = 248 nm, τ = 25 ns) deposition. This silicon-on-conductor device configuration has potential applications in three-dimensional integrated circuits and radiation hard devices.The two interfaces were quite sharp without any indication of interfacial reaction between them. The epitaxial relationship was found to be <100> Si II<100> TiN II<100> Si. In the plane, four unit cells of TiN matched with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides the mechanism of epitaxial growth in systems with large lattice mismatch. Energetics and growth characteristics of such domain matching epitaxy in the high lattice mismatch Si/TiN/Si(100) system and possible device implications are discussed.

Domain matching epitaxy stabilized metastable, tetragonal BiFeO3 on symmetry-mismatched c-plane ZnO

2021 ◽  
Author(s):  
Yajuan Zhao ◽  
Zhigang Yin ◽  
Xingxing Li ◽  
Maoyuan Zheng ◽  
Yong Cheng ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Lattice Mismatch ◽  
Rhombohedral Phase ◽  
Tetragonal Symmetry ◽  
Formula Unit ◽  
Monoclinic Structure ◽  
X Ray ◽  
Oxide Electronics ◽  
Domain Matching Epitaxy ◽  
Bifeo3 Film

Abstract We report the stabilization of metastable tetragonal BiFeO3 epilayer on ZnO(0001) surface. X-ray reciprocal space map characterizations show that the BiFeO3 film is of true tetragonal symmetry, but not the commonly observed monoclinic structure. The critical thickness of the tetragonal BiFeO3 is higher than 140 nm, much larger than that reported previously. Despite the considerable lattice mismatch and symmetry mismatch, tetragonal BiFeO3 can be formed on ZnO(0001) though domain matching epitaxy which is featured by anisotropic growth. We show that by taking into account the elastic energy during the initial semi-coherent growth, the tetragonal phase is lower than the thermally stable rhombohedral phase in total energy by 70 meV per formula unit. Moreover, local piezoelectric characterizations reveal a coercive field of 360 kV/cm and a piezoelectric constant of 48 pm/V. The integration of tetragonal BiFeO3 with robust ferroelectricity on the platform of ZnO has potentials for all-oxide electronics applications.

Characteristics of Ag Contact Erosion at Beginning of Break due to DC Arc in Low Voltage Switches

2019 ◽  
Vol 139 (5) ◽  
pp. 287-292
Author(s):  
Katsuki Hotta ◽  
Shinya Watanabe ◽  
Takashi Inaguchi
Keyword(s):  
Low Voltage ◽  
Contact Erosion ◽  
Ag Contact ◽  
Dc Arc

The Application of Rare-Earth Element

2011 ◽  
Vol 233-235 ◽  
pp. 3005-3009
Author(s):  
Yu Cai Wu ◽  
Ming Yan
Keyword(s):  
Tensile Strength ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Rare Earth Element ◽  
Earth Element ◽  
Additive Process ◽  
Contact Wire ◽  
Specific Elongation ◽  
Ag Contact ◽  
The Rare Earth

In this paper, the process of Cu-Ag contact wire with adding rare-earth elements was presented. The additive process of the rare-earth elements and the function of the rare earth were chiefly analyzed. Adding the rare-earth elements into melt alloy, the oxide and sulfur can be removed from the liquid, so we can get the purified alloy. At the same time, adding rare-earth can reduce the external crack flaws which produced during the casting and makes the grain refined, as the result, the properties of the Cu-Ag alloy contact wire can be greatly improved and meliorated. Such as the conductivity, the specific elongation, tensile strength and so on, are improved.

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